Calculated properties of a {113} planar vacancy aggregate in Si
Large aggregates of self-interstitials are known to be responsible for the rodlike defects which have a {113} habit plane. In regions where there is a supersaturation of vacancies, similar defects are formed by the aggregation of lattice vacancies. We present the results of first principles calculations that show such structures to be particularly stable in comparison to isolated vacancies and stable vacancy clusters, but less stable than the {113} self-interstitial structures.
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