p-type doping of graphene with F4-TCNQ

H Pinto, R Jones, JP Goss and PR Briddon
Journal of Physics: Condensed Matter (Fast Track Communications)
21
402001
3
2009
DOI

We use local density function theory to study the electronic properties of tetrafluoro-tetracyanoquinodimethane (F4-TCNQ) deposited on a graphene surface. We show that charge transfer of 0.3 holes/molecule between graphene and F4-TCNQ occurs, which makes graphene p-type doped. These results are in agreement with experimental findings on F4-TCNQ.

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