Dr Nick Wright : Research


My main research interests are:

Semiconductor Device Processing (in particular Si and SiC)

Cluster-tool Processing

Semiconductor Equipment Design

 
Recent key publications:

Sulphur Based Passivation For High Voltage GaAs Schottky Diodes - N.G.Wright, C.M.Johnson and A.G.O'Neill, Solid-State Electronics 42, 437-440 (1998). 

Cell Geometry Optimisation of 4H-SiC UMOSFETs by Electrothernal simulation - N.G.Wright, C.M.Johnson and A.G.O'Neill, Solid-State Electronics 43, 515-520 (1999). 

Low temperature annealing of 4H-SiC Schottky diode edge terminations formed by 30keV Ar+ implantation - A. P. Knights, M. A. Lourenço, K. P. Homewood, D. J. Morrison, N. G. Wright, S. Ortolland, C. M. Johnson, A. G. O’Neill, P. G. Coleman, K. P. Hilton and M. J. Uren, J. Appl Phys. 87, 3973-3977 (2000). 

Evaluation of GaAs Schottky gate bipolar transistor (SGBT) by electrothermal simulation - M Hossin, C M Johnson, N G Wright and A G O’Neill, Solid State Electronics, 44, 85-94 (2000).

Surface Preparation for Schottky Metal - 4H-SiC Contacts formed on Plasma Etched SiC - D. J. Morrison, A. J. Pidduck, V. Moore, P. J. Wilding, K. P. Hilton, M. J. Uren, C. M. Johnson, N. G. Wright and A. G. O’Neill, Semiconductor Science and Technology, 15, 1107-1113 (2000). 

Effect of Post-Implantation Anneal on the Electrical Characteristics of Ni 4H-SiC Schottky Barrier Diodes terminated using Self-Aligned Argon Ion Implantation - D. J. Morrison, N. G. Wright, A. B. Horsfall, C. M. Johnson, A. G. O’Neill, A. P. Knights, K. P. Hilton and M. J. Uren, Solid-State Electronics, 44, 1879-1885 (2000). 

Active Grants

Silicon Carbide Electronics for High Power High Temperature Applications (SCEPTRE), £570k 31/5/98 to 31/5/01 (EPSRC GR/L62320) – with C.M. Johnson and A. G. O’Neill. 

High Resolution low-cost photolithographic system, £4k 1/10/98 to 1/10/01 (Nuffield Foundation). 

Postgraduate Research Support - £50k 1/10/98 to 1/10/01 (Applied Materials) - with A. G. O’Neill and C.M. Johnson. 

Post-graduate Research Support - £30k 1/12/96 to 1/12/99 (Siemens Microelectronics Ltd) - with A. G. O’Neill.

Electronics For Extreme Environments - £60k (EPSRC Announced Jan 2001) - with A. G. O’Neill and C.M. Johnson. 
 

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