Planar interstitial aggregates in Si

JP Goss, TAG Eberlein, R Jones, N Pinho, AT Blumenau, T Frauenheim, PR Briddon and S Öberg
Journal of Physics: Condensed Matter

Self-interstitials in silicon aggregate to form rod-like defects aligned along [110] directions and inhabiting either {111} or {113} crystallographic planes. These systems are known to be electrically and optically active. We present the results of first-principles calculations on the structure and energetics for candidate structures contained within the {113}, {111} and {001} planes and compare the results with experiment.

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