Intrinsic defects and the D1 to D4 optical bands detected in plastically deformed Si

R Jones, BJ Coomer, JP Goss, S Öberg and PR Briddon
Physica Status Solidi B

The properties of multi-vacancy and multi-interstitial defects that possess luminescent bands around 1 eV are reviewed. Prominent among these are the hexavacancy and tri- and tetra-self-interstitial defects. It is suggested that the formation of these defects on dislocation cores could lead to the D1 to D4 photoluminescent bands linked to dislocations in Si and SiGe.

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