Theory of interstitial aggregates in germanium
Proceedings of the 2nd ENDEASD (European Network on Defect Engineering of Advanced Semiconductor Devices) Workshop, Kista, Sweden
2000
Ab initio methods are employed to examine the structure of the Ge self-interstitial and its aggregates. The energetics of the defects investigated here are broadly similar to the results found for the corresponding defects in Si. We report the predicted electronic structures of these defects.
Go back