Publications (chronological)
1994 1995 1996 1997 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 Topics back

 

2012

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  1. A comprehensive study on the leakage current mechanisms of Pt/SrTiO3/Pt capacitor  
    S. A. Mojarad, K. S. K. Kwa, J. P. Goss, Z. Zhou, N. K. Ponon, D. J. R. Appleby, R. A. S. Al-Hamadany, and A. O'Neill
    J. Appl. Phys. 111, art.no. 014503(6 pages) (2012)[doi link]
     

2011

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  1. Influence of intercalated silicon on the transport properties of graphene 
    J.P. Goss, P.R. Briddon, V.K. Nagareddy, N.G. Wright, A.B. Horsfall, J.D. Caldwell, D.K. Gaskill, G.G. Jernigan
    Mater. Sci. Forum 679-680, pp.793–796 (2011)
     
  2. Bistable N2-H complexes: The first proposed structure of a H-related colour-causing defect in diamond 
    J.P. Goss, C.P. Ewels, P.R. Briddon, E. Fritsch,
    Diam. Relat. Mat. 20, pp.896–901 (2011)[doi link]
     
  3. Calculated strain response of vibrational modes for H-containing point defects in diamond 
    J. P. Goss, P. R. Briddon
    Physical Chemistry Chemical Physics 13, pp.11488–11494 (2011)[doi link]
     
  4. Theory of the surface effects on the luminescence of the NV(-) defect in nanodiamond  
    H. Pinto, R. Jones, D. W. Palmer, J. P. Goss, P. R. Briddon, S. Öberg
    Phys. Status Solidi A-Appl. Mat. 208, pp.2045–2050 (2011)[doi link]
     
  5. High temperature measurements of metal contacts on epitaxial graphene 
    V. K. Nagareddy, I. P. Nikitina, D. K. Gaskill, J. L. Tedesco, R. L. Myers-Ward, C. R. Eddy, J. P. Goss, N. G. Wright, A. B. Horsfall,
    Appl. Phys. Lett. 99, art.no. 073506(3 pages)  (2011)[doi link]
     
  6. Calculated electron affinity and stability of halogen-terminated diamond 
    A. K. Tiwari, J. P. Goss, P. R. Briddon, N. G. Wright, A. B. Horsfall, R. Jones, H. Pinho, M. J. Rayson
    Phys. Rev. B 84, art.no. 245305(9 pages) [doi link]
     
  7. Single substitutional nitrogen defects revealed as electron acceptor states in diamond using ultrafast spectroscopy 
    R. Ulbricht, S. T. van der Post, J. P. Goss, P. R. Briddon, R. Jones, R. U. A. Khan, M. Bonn
    Phys. Rev. B 84, art.no. 165202(9 pages) [doi link]
     

2010

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  1. Ab Initio study of functionalized 1 nm silicon nanoparticles 
    M. E. Ahmed, J. P. Goss, R. J. Eyre, P. R. Briddon, and M. A. Taylforth
    J. Phys.: Conf. Series 245, 012046(4pages) (2010) [doi link]
     
  2. Theoretical investiagation on optical characteristics of functionalised silicon quantum dots 
    M. E. Ahmed, J. P. Goss, R. J. Eyre, P. R. Briddon, and M. A. Taylforth
    NSTI Technical Proceedings: Nanotech2010 Vol. 2, Chapter 10, pp 556-559 (2010)
     
  3. EPR of a defect in CVD diamond involving both silicon and hydrogen that shows preferential alignment 
    U. F. S. D'Haenens-Johansson, A. M. Edmonds, M. E. Newton, J. P. Goss, P. R. Briddon, J. M. Baker, P. M. Martineau, R. U. A. Khan, D. J. Twitchen and S. D. Williams
    Phys. Rev. B 82, art.no. 155205(10 pages) [doi link]
     
  4. A density functional theory study of models for the N3 and OK1 EPR centres in diamond 
    K. M. Etmimi, J. P. Goss, P. R. Briddon and A. M. Gsiea
    J. Phys.: Condens. Matter 22, 385502(8pages) (2010) [doi link]
     
  5. Optically active point defects in high quality single crystal diamond 
    J. P. Goss P. R. Briddon, H. Pinto, and R. Jones,
    Phys. Status Solidi A-Appl. Mat. 207, pp.2049–2053 (2010)[doi link]
     
  6. Density functional simulations of physisorbed and chemisorbed single graphene layers on 4H-SiC (0001), (000-1) and 4H-SiC:H surface 
    J.P. Goss, P.R. Briddon, N.G. Wright, A.B. Horsfall
    Mater. Sci. Forum 645-648 (part 1), pp.619–622 (2010)
     
  7. Identification of the di-nitrogen <001> split interstitial H1a in diamond 
    S. Liggins, M.E. Newton, J.P. Goss, P.R. Briddon, D. Fisher
    Physical Review B 81, art.no. 085214(7 pages) (2010) [doi link]
     
  8. Mechanisms of doping graphene 
    H. Pinto, R. Jones, J. P. Goss and P. R. Briddon
    Phys. Status Solidi A-Appl. Mat. 207, pp.2131–2136 (2010)[doi link]
     
  9. Unexpected change in the electronic properties of the Au-graphene interface caused by toluene 
    H. Pinto, R. Jones, J. P. Goss and P. R. Briddon
    Phys. Rev. B 82 art.no. 125407(8 pages) (2010)[doi link]
     

2009

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  1. Nitrogen-pair paramagnetic defects in diamond: A density functional study 
    K.M. Etmimi, M.E. Ahmed, P.R. Briddon, J.P. Goss, A.M. Gsiea
    Physical Review B 79, art.no. 205207(11 pages) (2009) [doi link]
     
  2. Density functional studies of muonium in nitrogen-aggregate containing diamond: the MuX centre. 
    K. M. Etmimi, J. P. Goss, P. R. Briddon and A. M. Gsiea
    J. Phys.:Condens. Matter 21, 364211(6pages) (2009) [doi link]
     
  3. Self-assembly of a bis(adeninyl)-Cu(I) complex: a cationic nucleobase duplex mimic 
    M. A. Galindo, D. Amantia, W. Clegg, R. W. Harrington, R. J. Eyre, J. P. Goss, P. R. Briddon, W. McFarlane and A. Houlton
    Chem. Commun. 2009, 2833–2835 (2009) [doi link]
     
  4. Density functional simulations of noble-gas impurities in diamond 
    J.P. Goss, R.J. Eyre, P.R. Briddon and A. Mainwood
    Physical Review B 80, art.no. 085204(7 pages) (2009) [doi link]
     
  5. Structure and vibrational properties of oxohalides of vanadium 
    V. Guiot, I. Suarez-Martinez, P. Wagner, J. Goss, P. Briddon, A. Allaf and C. Ewels
    Inorganic Chemistry 48, pp.3660–3666 (2009)[doi link]
     
  6. The self-interstitial in silicon and germanium 
    R. Jones, A. Carvalho, J.P. Goss, P.R. Briddon
    Materials Science and Engineering B 159-160, pp.112–116 (2009) [doi link]
     
  7. Acceptor level of nitrogen in diamond and the 270-nm absorption band 
    R. Jones, J.P. Goss, P.R. Briddon
    Physical Review B 80, art.no. 033205(4 pages) (2009) [doi link]
     
  8. Model thermodynamics and the role of free-carrier energy at high temperatures: Nitrogen and boron pairing in diamond 
    R.M. MacLeod, S.W. Murray, J.P. Goss, P.R. Briddon, R.J. Eyre
    Phys. Rev. B 80, 054106(7 pages) (2009) [doi link]
     
  9. p-type doping of graphene with F4-TCNQ 
    H. Pinto, R. Jones, J. P. Goss, and P. R. Briddon
    J. Phys.:Condens. Matter (Fast Track Communication) 21, 402001(3pages) (2009) [doi link]
     

2008

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  1. Identification of sulfur at a split-vacancy site in diamond. 
    J.M. Baker, J.A. van Wyk, J.P. Goss, P.R. Briddon.
    Phys. Rev. B 78 art.no. 235203(9 pages) (2008)[doi link]
     
  2. First-principles study of Fe and FeAl defectsin SiGe alloys 
    A. Carvalho, J. Coutinho, R. Jones, J. Goss, M. Barroso, P.R. Briddon.
    Phys. Rev. B 78 art.no. 125208(5 pages) (2008)[doi link]
     
  3. First-principles study of the diffusion mechanisms of the self-interstitial in germanium 
    A. Carvalho, R. Jones, J.P. Goss, C. Janke, S. Öberg and P.R. Briddon
    J. Phys.-Condes. Matter 20 art.no. 135220 (5 pages) (2008)[doi link]
     
  4. Density-functional theory study of interstitial iron and its complexes with B and Al in dilute SiGe alloys 
    A Carvalho, J Coutinho, R Jones, M Barroso, JP Goss and PR Briddon
    Materials Science in Semiconductor Processing 11, 332–335 (2008) [doi link]
     
  5. Doping of graphene: Density functional calculations of charge transfer between GaAs and graphene and carbon nanostructures. 
    T.A.G. Eberlein, R. Jones, J.P. Goss, P.R. Briddon.
    Phys. Rev. B 78 art.no. 045403(5 pages) (2008)[doi link]
     
  6. The effect of progressive oxidation on the optical properties of small Silicon Quantum Dots: A computational study 
    R.J. Eyre, J.P. Goss, P.R. Briddon.
    Phys. Rev. B 77 art.no. 245407(7 pages) (2008)[doi link]
     
  7. Stability of singly hydrated silanone on silicon quantum dot surfaces: density functional simulations 
    R.J. Eyre, J.P. Goss, R.M. MacLeod, P.R. Briddon.
    Physical Chemistry Chemical Physics 10, pp. 4495–4502 (2008)[doi link]
     
  8. Dissociation of B-H pairs in diamond as enhanced by electronic excitation and electron capture: Computational modeling 
    J.P. Goss and P.R. Briddon
    Phys. Rev. B 77 art.no. 035211(7 pages) (2008)[doi link]
     
  9. Bound substitutional impurity pairs in diamond: a density functional study 
    J.P. Goss, R.J. Eyre and P.R. Briddon
    J. Phys.-Condes. Matter 20 art.no. 085217 (9 pages) (2008)[doi link]
     
  10. Theoretical models for doping diamond for semiconductor applications 
    J.P. Goss, R.J. Eyre and P.R. Briddon
    Physica Status Solidi B (Review Article) 245(9) pages 1679–1700 (2008)[doi link]
     
  11. Theoretical models for doping diamond for semiconductor applications 
    J.P. Goss, R.J. Eyre and P.R. Briddon
    in Physics and applications of CVD diamond edited by S. Koizumi, C.E. Nebel and M. Nesladek, Wiley-VCH (2008), chapter 8, pp.199–236.
     

2007

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  1. A density functional study of oxygen migration processes for silicon quantum dots 
    R.J. Eyre, J.P. Goss and P.R. Briddon
    Phys. Rev. B 76 art.no. 245325(6 pages) (2007)[doi link]
     
  2. Self-interstitials and Frenkel pairs in electron-irradiated germanium 
    A. Carvalho, R. Jones, J. Goss, C. Janke, J. Coutinho, S. Öberg and P.R. Briddon
    Physica B 401–402, 495–498  (2007)[doi link]
     
  3. The self-interstitial in germanium 
    A. Carvalho, R. Jones, C. Janke, J.P. Goss, P.R. Briddon, J. Coutinho, and S. Öberg
    Phys. Rev. Lett. 99, art.no. 175502 (4 pages)  (2007)[doi link]
     
  4. Density functional simulations of silicon-containing point defects in diamond 
    J.P. Goss, P.R. Briddon, and M.J. Shaw
    Phys. Rev. B 76, art.no. 075204 (11 pages)  (2007)[doi link]
     
  5. Metastable Frenkel pairs and the W11–W14 electron paramagnetic resonance centers in diamond 
    J.P. Goss, M.J. Rayson, P.R. Briddon, and J.M. Baker
    Phys. Rev. B 76, art.no. 045203 (9 pages)  (2007)[doi link]
     
  6. Transfer Doping of diamond via 2,3-dichloro-5,6-dicyano-1,4-benzoquinone (DDQ) 
    J.P. Goss, R.J. Eyre and P.R. Briddon
    Phys. Status Solidi A-Appl. Mat. 204, pp.2903–2908 (2007)[doi link]
     
  7. Multi-impurity complexes for n-type diamond: a computational study 
    R.J. Eyre, J.P. Goss, P.R. Briddon, and M.G. Wardle
    Phys. Status Solidi A-Appl. Mat. 204, pp.2971–2977 (2007)[doi link]
     
  8. A theoretical study of Li as n type dopants for diamond: the role of aggregation 
    J.P. Goss, R.J. Eyre, and P.R. Briddon
    Phys. Status Solidi A-Appl. Mat. 204, pp.2978–2984 (2007)[doi link]
     
  9. Marker-Method Calculations for Electrical Levels Using Gaussian-Orbital Basis Sets 
    J.P. Goss, M.J. Shaw and P.R. Briddon
    Topics in Applied Physics 104, 69–94  (2007)[doi link]
     
  10. Theoretical study of Li and Na as n-type dopants for diamond 
    J.P. Goss and P.R. Briddon
    Phys. Rev. B 75, art.no. 075202 (9 pages)  (2007)[doi link]
     

2006

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  1. Donor levels for selected n-type dopants in diamond: a computational study on the effect of supercell-size 
    J.P. Goss, P.R. Briddon and R.J. Eyre
    Phys. Rev. B 74, art.no. 245217 (7 pages)  (2006)[doi link]
     
  2. Relationship between binding-site and pressure-dependence for defect-hydrogen complexes in ZnO 
    M.G. Wardle, J.P. Goss, and P.R. Briddon
    Appl. Phys. Lett. 88, art.no. 261906  (2006)[doi link]
     
  3. First-principles study of the diffusion of hydrogen in ZnO 
    M.G. Wardle, J.P. Goss, and P.R. Briddon
    Phys. Rev. Lett. 96, art.no. 205504  (2006)[doi link]
     
  4. Platelets and the <110>a0/4 {001} stacking fault in diamond 
    J.P. Goss, P.R. Briddon, R. Jones and M.I. Heggie
    Phys. Rev. B 73, art.no. 115204 (6 pages)  (2006)[doi link]
     
  5. Theory of boron aggregates in diamond: First-principles calculations 
    J.P. Goss and P.R. Briddon,
    Phys. Rev. B 73, art.no. 085204 (8 pages)  (2006)[doi link]
     
  6. Transition-metal and hydrogen in ZnO: a source of shallow donors 
    M.G. Wardle, J.P. Goss and P.R. Briddon,
    Physica B 376–377, 731–734  (2006)[doi link]
     
  7. Theory of Mn-H co-doping for GaAs and related magnetic semiconductors 
    J.P. Goss, P.R. Briddon, and M.G. Wardle,
    Physica B 376–377, 654–657  (2006)[doi link]
     
  8. Erratum: Vacancy-impurity complexes and limitations for implantation doping of diamond [Phys. Rev. B 72, 035214 (2005)] 
    J.P. Goss, P.R. Briddon, M.J. Rayson, S.J. Sque, R. Jones,
    Phys. Rev. B 73, art.no. 199904(E)  (2006)[doi link]
     
  9. J. Goss
    Physical Sciences Educational Reviews 7(1), pp.40–41 (2006)
     

2005

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  1. Theoretical investigations of the diffusion of nitrogen-pair defects in silicon 
    N. Fujita, R. Jones, J.P. Goss, T. Frauenheim, S. Öberg, and P.R. Briddon,
    Sol. St. Phen 108-109, pp.407–412 (2005)
     
  2. Theory of Fe, Co, Ni, Cu, and their complexes with hydrogen in ZnO 
    M.G. Wardle, J.P. Goss and P.R. Briddon,
    Phys. Rev. B 72, art.no. 155108 (13 pages)  (2005)[doi link]
     
  3. Theory of MnGa-H and other acceptor-H complexes in GaAs 
    J.P. Goss and P.R. Briddon,
    Phys. Rev. B 72, art.no. 115211 (8 pages)  (2005)[doi link]
     
  4. Comment on the a/4[110] stacking fault model for platelets in diamond 
    R. Jones, M.I. Heggie and J.P. Goss,
    Phys. Rev. Lett. 95, art.no. 139601  (2005)[doi link]
     
  5. Importance of Quantum Tunneling in Vacancy-Hydrogen Complexes in Diamond 
    M.J. Shaw, P.R. Briddon, J.P. Goss, M.J. Rayson, A. Kerridge, A.H. Harker and A.M. Stoneham,
    Phys. Rev. Lett. 95, art.no. 105502  (2005)[doi link]
     
  6. Erratum: Importance of Quantum Tunneling in Vacancy-Hydrogen Complexes in Diamond [Phys. Rev. Lett. 95, 105502 (2005)] 
    M.J. Shaw, P.R. Briddon, J.P. Goss, M.J. Rayson, A. Kerridge, A.H. Harker and A.M. Stoneham,
    Phys. Rev. Lett. 95, art.no. 219901  (2005)[doi link]
     
  7. Theory of Jahn–Teller distortions of the P donor in diamond 
    R.J. Eyre, J.P. Goss, P.R. Briddon, and J.P. Hagon
    J. Phys.-Condes. Matter 17, pp.5831–5387  (2005)[doi link]
     
  8. Vacancy-impurity complexes and limitations for implantation doping of diamond 
    J.P. Goss, P.R. Briddon, M.J. Rayson, S.J. Sque, R. Jones,
    Phys. Rev. B 72, art.no. 035214 (11 pages)  (2005)[doi link]
     
  9. Diffusion of nitrogen in silicon 
    N. Fujita, R. Jones, J.P. Goss, P.R. Briddon, T. Frauenheim, S. Öberg,
    Appl. Phys. Lett. 87, art.no. 021902  (2005)[doi link]
     
  10. Recent advancements in the development of radiation hard semiconductor detectors for S-LHC 
    E. Fretwurst, ... J. Goss, ... N. Zorzi,
    Nucl. Instrum. Methods Phys. Res. Sect. A-Accel. Spectrom. Dect. Assoc. Equip. 552, pp.7–19 (2005)[doi link]
     
  11. Development of radiation tolerant semiconductor detectors for the Super-LHC 
    M. Moll, ... J. Goss, ... N. Zorzi,
    Nucl. Instrum. Methods Phys. Res. Sect. A-Accel. Spectrom. Dect. Assoc. Equip. 546, pp.99–107 (2005)[doi link]
     
  12. Theory of Li in ZnO: A limitation for Li-based p-type doping 
    M.G. Wardle, J.P. Goss, P.R. Briddon,
    Phys. Rev. B 71, art.no. 155205 (10 pages)  (2005)[doi link]
     
  13. Radiation-hard semiconductor detectors for SuperLHC 
    M. Bruzzi, ... J. Goss, ... N. Zorzi,
    Nucl. Instrum. Methods Phys. Res. Sect. A-Accel. Spectrom. Dect. Assoc. Equip. 541, pp.189–201 (2005)[doi link]
     
  14. Structural and electronic properties of thin fluorite-structure NiSi2, CoSi2 and FeSi2 interfaces and precipitates in Si 
    M.G. Wardle, J.P. Goss, P.R. Briddon, R. Jones,
    Phys. Status Solidi A-Appl. Mat. 202, pp.883–888 (2005)[doi link]
     
  15. First-principles study of C60and C60F36 as transfer dopants for p-type diamond 
    S.J. Sque, R. Jones, J.P. Goss, P.R. Briddon, S. Öberg,
    J. Phys.-Condes. Matter 17, pp.L21–L26 (2005)[doi link]
     
  16. Quantum Mechanical Modeling of the Structure and Doping Properties of Defects in Diamond 
    J.P. Goss, P.R. Briddon, R. Sachdeva, R. Jones, S.J. Sque,
    AIP conference proceedings 722part A, pp.91–94 (2005)[preprint pdf]
     
  17. Novel Doping of Diamond using C60 
    S.J. Sque, R. Jones, J.P. Goss, P.R. Briddon, S. Öberg,
    CSAR Focus 13, pp.13–15 (2005)[link]
     
  18. DFT analysis of the indium-antimony-vacancy cluster in silicon 
    M.M. De Souza and J. Goss
    Defects and Diffusion Forum 245-246, pp.29–38 (2005)
     
  19. J. Goss
    Physical Sciences Educational Reviews 6(1), pp.11–12 (2005)
     

2004

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  1. Interstitial nitrogen and its complexes in diamond 
    J.P. Goss, P.R. Briddon, S. Papagiannidis, R. Jones,
    Phys. Rev. B 70, art.no. 235208 (15 pages)  (2004)[doi link]
     
  2. Electrical and optical properties of rod-like defects in silicon 
    J.P. Goss, P.R. Briddon, T.A.G. Eberlein, R. Jones, N. Pinho, A.T. Blumenau, S. Öberg,
    Appl. Phys. Lett. 85, pp.4633–4635 (2004)[doi link]
     
  3. The lattice location of Ni in diamond: a theoretical study 
    J.P. Goss, P.R. Briddon, R. Jones, S. Öberg,
    J. Phys.-Condes. Matter 16, pp.4567–4578 (2004)[doi link]
     
  4. Calculated properties of a {113} planar vacancy aggregate in Si 
    J.P. Goss, P.R. Briddon, R. Jones,
    J. Phys.-Condes. Matter 16, pp.3311–3318 (2004)[doi link]
     
  5. Donor and acceptor states in diamond 
    J.P. Goss, P.R. Briddon, R. Jones, S. Sque,
    Diam. Relat. Mat. 13, pp.684–690 (2004)[doi link]
     
  6. Boron-hydrogen complexes in diamond 
    J.P. Goss, P.R. Briddon, S.J. Sque, R. Jones,
    Phys. Rev. B 69, art.no. 165215 (8 pages)  (2004)[doi link]
     
  7. Shallow donors in diamond: Chalcogens, pnictogens, and their hydrogen complexes 
    S.J. Sque, R. Jones, J.P. Goss, P.R. Briddon,
    Phys. Rev. Lett. 92, art.no. 017402  (2004)[doi link]
     
  8. Structure and electronic properties of nitrogen defects in silicon 
    R. Jones, I. Hahn, J.P. Goss, P.R. Briddon, and S. Öberg,
    Sol. St. Phen. 95–96, pp.93–98 (2004)[preprint pdf]
     

2003

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  1. Interstitial boron defects in Si 
    J. Adey, J.P. Goss, R. Jones, P.R. Briddon,
    Physica B 340, pp.505–508 (2003)[doi link]
     
  2. First principles calculation of zero-field splitting tensors 
    M.J. Rayson, J.P. Goss, P.R. Briddon,
    Physica B 340, pp.673–676 (2003)[doi link]
     
  3. Deep hydrogen traps in heavily B-doped diamond 
    J.P. Goss, P.R. Briddon, R. Jones, Z. Teukam, D. Ballutaud, F. Jomard, J. Chevallier, M. Bernard, A. Deneuville,
    Phys. Rev. B 68, art.no. 235209 (10 pages)  (2003)[doi link]
     
  4. Shallow donors in diamond: pnictogen and chalcogen hydrogen defects 
    S.J. Sque, R. Jones, J.P. Goss, P.R. Briddon,
    Physica B 340, pp.80–83 (2003)[doi link]
     
  5. Optical and electrical activity of boron interstitial defects in Si 
    J. Adey, R. Jones, P.R. Briddon, J.P. Goss,
    J. Phys.-Condes. Matter 15, pp.S2851–S2858 (2003)[doi link]
     
  6. The vacancy-nitrogen-hydrogen complex in diamond: a potential deep centre in chemical vapour deposited material 
    J.P. Goss, P.R. Briddon, R. Jones, S. Sque,
    J. Phys.-Condes. Matter 15, pp.S2903–S2911 (2003)[doi link]
     
  7. Vibrational modes of sulfur defects in GaP 
    R.S. Leigh, M.J.L. Sangster, R.C. Newman, J.P. Goss, R. Jones, V.J.B. Torres, S. Öberg, P.R. Briddon,
    Phys. Rev. B 68, art.no. 033304 (4 pages)  (2003)[doi link]
     
  8. Identification of boron clusters and boron-interstitial clusters in silicon 
    J. Adey, J.P. Goss, R. Jones, P.R. Briddon,
    Phys. Rev. B 67, art.no. 245325 (5 pages)  (2003)[doi link]
     
  9. The structures and properties of tetrafluoromethane, hexafluoroethane, and octafluoropropane using the AIMPRO density functional program 
    R.W. Zoellner, C.D. Latham, J.P. Goss, W.G. Golden, R. Jones, P.R. Briddon,
    J. Fluor. Chem. 121, pp.193–199 (2003)[doi link]
     
  10. Theory of hydrogen in diamond 
    J.P. Goss,
    J. Phys.-Condes. Matter 15, pp.R551–R580 (2003)[doi link]
     
  11. Extended defects in diamond: The interstitial platelet 
    J.P. Goss, B.J. Coomer, R. Jones, C.J. Fall, P.R. Briddon, S. Öberg,
    Phys. Rev. B 67, art.no. 165208 (15 pages)  (2003)[doi link]
     
  12. Vibrational modes and electronic properties of nitrogen defects in silicon 
    J.P. Goss, I. Hahn, R. Jones, P.R. Briddon, S. Öberg,
    Phys. Rev. B 67, art.no. 045206 (11 pages)  (2003)[doi link]
     
  13. First-principles calculations of pseudolocal vibrational modes: The case of Cu and Cu pairs in Si 
    S.K. Estreicher, D. West, J. Goss, S. Knack, J. Weber,
    Phys. Rev. Lett. 90, art.no. 035504  (2003)[doi link]
     

2002

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  1. Glide dislocations in diamond: first-principles calculations of similarities with and differences from silicon and the effects of hydrogen 
    M.I. Heggie, C.P. Ewels, N. Martsinovich, S. Scarle, R. Jones, J.P. Goss, B. Hourahine, P.R. Briddon,
    J. Phys.-Condes. Matter 14, pp.12689–12696 (2002)[doi link]
     
  2. Planar interstitial aggregates in Si 
    J.P. Goss, T.A.G. Eberlein, R. Jones, N. Pinho, A.T. Blumenau, T. Frauenheim, P.R. Briddon, S. Öberg,
    J. Phys.-Condes. Matter 14, pp.12843–12853 (2002)[doi link]
     
  3. Theory of hydrogen in diamond 
    J.P. Goss, R. Jones, M.I. Heggie, C.P. Ewels, P.R. Briddon, S. Öberg,
    Phys. Rev. B 65, art.no. 115207 (13 pages)  (2002)[doi link]
     
  4. Stress tensors and dilatation of interstitial defects in diamond 
    J.P. Goss, R. Jones, P.R. Briddon,
    Phys. Rev. B 65, art.no. 035203 (8 pages)  (2002)[doi link]
     
  5. Self-interstitial clusters in silicon 
    R. Jones, T.A.G. Eberlein, N. Pinho, B.J. Coomer, J.P. Goss, P.R. Briddon, S. Öberg,
    Nucl. Instrum. Methods Phys. Res. Sect. B-Beam Interact. Mater. Atoms 186, pp.10–18 (2002)[doi link]
     
  6. J. Goss
    Physical Sciences Educational Reviews 3(1), p.17 (2002)
     
  7. J. Goss
    Physical Sciences Educational Reviews 3(2), pp.10–11 (2002)
     

2001

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  1. Volume expansion and stress tensors for self-interstitial aggregates in diamond 
    J.P. Goss, R. Jones, P.R. Briddon,
    Physica B 308, pp.604–607 (2001)[doi link]
     
  2. Self-interstitial clusters in silicon 
    T.A.G. Eberlein, N. Pinho, R. Jones, B.J. Coomer, J.P. Goss, P.R. Briddon, S. Öberg,
    Physica B 308, pp.454–457 (2001)[doi link]
     
  3. Modelling electron energy-loss spectra of dislocations in silicon and diamond 
    C.J. Fall, J.P.G. Goss, R. Jones, P.R. Briddon, A.T. Blumenau, T. Frauenheim,
    Physica B 308, pp.577–580 (2001)[doi link]
     
  4. P-type surface doping of diamond: a first-principles study 
    J.P. Goss, B. Hourahine, R. Jones, M.I. Heggie, P.R. Briddon,
    J. Phys.-Condes. Matter 13, pp.8973–8978 (2001)[doi link]
     
  5. First principles study of the of the self-interstitial defect in diamond 
    J.P. Goss, R. Jones, T.D. Shaw, M.J. Rayson, P.R. Briddon,
    Phys. Status Solidi A-Appl. Res. 186, pp.215–220 (2001)[doi link]
     
  6. First principles studies of H in diamond 
    J.P. Goss, R. Jones, M.I. Heggie, C.P. Ewels, P.R. Briddon, S. Öberg,
    Phys. Status Solidi A-Appl. Res. 186, pp.263–268 (2001)[doi link]
     
  7. Self-interstitial aggregation in diamond 
    J.P. Goss, B.J. Coomer, R. Jones, T.D. Shaw, P.R. Briddon, M. Rayson, S. Öberg,
    Phys. Rev. B 63, art.no. 195208 (14 pages)  (2001)[doi link]
     
  8. Interstitial aggregates in diamond 
    J.P. Goss, B.J. Coomer, R. Jones, T.D. Shaw, P.R. Briddon, S. Öberg,
    Diam. Relat. Mat. 10, pp.434–438 (2001)[doi link]
     
  9. Identification of the tetra-interstitial in silicon 
    B.J. Coomer, J.P. Goss, R. Jones, S. Öberg, P.R. Briddon,
    J. Phys.-Condes. Matter 13, pp.L1–L7 (2001)[doi link]
     
  10. J. Goss
    Physical Sciences Educational Reviews 2(2), pp.27–28 (2001)
     

2000

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  1. Small aggregates of interstitials and models for platelets in diamond 
    J.P. Goss, B.J. Coomer, R. Jones, C.J. Fall, C.D. Latham, P.R. Briddon, S. Öberg,
    J. Phys.-Condes. Matter 12, pp.10257–10261 (2000)[doi link]
     
  2. Intrinsic defects and the D1 to D4 optical bands detected in plastically deformed Si 
    R. Jones, B.J. Coomer, J.P. Goss, S. Öberg, P.R. Briddon,
    Phys. Status Solidi B-Basic Res. 222, pp.133–140 (2000)[doi link]
     
  3. Global model of a radiofrequency H2plasma in DENISE 
    R. Zorat, J. Goss, D. Boilson, D. Vender,
    Plasma Sources Sci. Technol. 9, pp.161–168 (2000)[doi link]
     
  4. The interaction of hydrogen with deep level defects in silicon 
    R. Jones, B.J. Coomer, J.P. Goss, B. Hourahine, A. Resende,
    Solid State Phenom. 71, pp.173–248 (2000)[preprint pdf]
     
  5. Data Review: Theory of aggregation of nitrogen in diamond 
    R. Jones and J.P. Goss,
    Properties, Growth and applications of Diamond, edited by MH Nazaré and AJ Neves (INSPEC, IEEE, London, 2000), Chap.A5.1.[preprint pdf]
     

1999

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  1. Interstitial aggregates and a new model for the I1/W optical centre in silicon 
    B.J. Coomer, J.P. Goss, R. Jones, S. Öberg, P.R. Briddon,
    Physica B 274, pp.505–508 (1999)[doi link]
     
  2. The divacancy in silicon and diamond 
    B.J. Coomer, A. Resende, J.P. Goss, R. Jones, S. Öberg, P.R. Briddon,
    Physica B 274, pp.520–523 (1999)[doi link]
     
  3. Energetics and vibrational frequencies of interstitial H2molecules in semiconductors 
    C.G. van de Walle, J.P. Goss,
    Mater. Sci. Eng. B-Solid State Mater. Adv. Technol. 58, pp.17–23 (1999)[doi link]
     
  4. Measurement of the electron energy distribution function in an argon radio-frequency discharge in the gamma mode 
    C.M. Deegan, J.P. Goss, D. Vender, M.B. Hopkins,
    Appl. Phys. Lett. 74, pp.1969–1971 (1999)[doi link]
     

1998

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  1. Identification of the hydrogen-saturated self-interstitials in silicon and germanium 
    M. Budde, B. Bech Nielsen, P. Leary, J. Goss, R. Jones, P.R. Briddon, S. Öberg, S.J. Breuer,
    Phys. Rev. B 57, pp.4397–4412 (1998)[doi link]
     
  2. Investigation of the Spatial Structure of a Capacitive Radiofrequency Discharge 
    C.M. Deegan, J.P. Goss, D. Vender, and M.B. Hopkins,
    Euro. Phys. Abs. 22, pp.202 (1998)
     
  3. Comparison Between Fluid Simulations and Experimentally Measured Profiles for an Inductive Ar Discharge in a Cylindrical Geometry 
    J.P. Goss, G. Cunge, B. Crowley, D. Vender, and M.M. Turner,
    Euro. Phys. Abs. 22, pp.220 (1998)
     
  4. Zero-Dimensional Model of a Low Pressure H2Discharge 
    R. Zorat, J.P. Goss, and D. Vender,
    Euro. Phys. Abs. 22, pp.350 (1998)
     

1997

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  1. Theory of gold-hydrogen complexes in silicon 
    A. Resende, J. Goss, P.R. Briddon, S. Öberg, R. Jones,
    Mater. Sci. Forum 258-2, pp.295–300 (1997)
     
  2. Breakdown of the vacancy model for impurity-vacancy defects in diamond 
    R. Jones, J.P. Goss, P.R. Briddon, S. Öberg,
    Mater. Sci. Forum 258-2, pp.775–780 (1997)
     
  3. A first principles study of interstitial Si in diamond 
    J.P. Goss, R. Jones, S.J. Breuer, P.R. Briddon, S. Öberg,
    Mater. Sci. Forum 258-2, pp.781–786 (1997)
     
  4. The hydrogen-saturated self-interstitial in silicon and germanium 
    M. Budde, B. Bech Nielsen, P. Leary, J. Goss, R. Jones, P.R. Briddon, S. Öberg, S.J. Breuer,
    Mater. Sci. Forum 258-2, pp.35–40 (1997)
     
  5. Comment on "Electronic structure of the N-V center in diamond: Theory" 
    J.P. Goss, R. Jones, P.R. Briddon, G. Davies, A.T. Collins, A. Mainwood, J.A. van Wyk, J.M. Baker, M.E. Newton, A.M. Stoneham, S.C. Lawson,
    Phys. Rev. B 56, pp.16031–16032 (1997)[doi link]
     
  6. N2 and N4 optical transitions in diamond: A breakdown of the vacancy model 
    R. Jones, J.P. Goss, P.R. Briddon, S. Öberg,
    Phys. Rev. B 56, pp.R1654–R1656 (1997)[doi link]
     
  7. (CAs)2-hydrogen defects in GaAs: A first-principles study 
    J.P. Goss, R. Jones, S. Öberg, P.R. Briddon,
    Phys. Rev. B 55, pp.15576–15580 (1997)[doi link]
     
  8. Is H passivating Mg Acceptors Bond-centred in InP:Mg and Anti-bonded in GaAs:Mg? 
    R. Bouanani-Rahbi, B. Pajot, C.P. Ewels, S. Öberg, J. Goss, R. Jones, Y. Nissim, B. Theys, C. Blaauw,
    Shallow Level Centers in Semiconductors, ed. C.A.J. Ammerlaan and B. Pajot, World Scientific, Singapore, (1997)
     
  9. A First Principles Study of Defects in Semiconductors 
    J.P. Goss,Ph.D. Thesis, Exeter, 1997
     

1996

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  1. Limitations to n-type doping in diamond: The phosphorus-vacancy complex 
    R. Jones, J.E. Lowther, J. Goss,
    Appl. Phys. Lett. 69, pp.2489–2491 (1996)[doi link]
     
  2. The twelve-line 1.682eV luminescence center in diamond and the vacancy-silicon complex 
    J.P. Goss, R. Jones, S.J. Breuer, P.R. Briddon, S. Öberg,
    Phys. Rev. Lett. 77, pp.3041–3044 (1996)[doi link]
     
  3. Local modes of the H2dimer in germanium 
    M. Budde, B. Bech Nielsen, R. Jones, J. Goss, S. Öberg,
    Phys. Rev. B 54, pp.5485–5494 (1996)[doi link]
     
  4. First principles theory of impurity-vacancy complexes in diamond 
    J.P. Goss, R. Jones, S.J. Breuer, P.R. Briddon, and S. Öberg,
    pp.2577–2580 inproceedings of the 23rd International Conference on the Physics of Semiconductors, ed. M. Scheffler and R. Zimmermann, World Scientific (London) 1996
     
  5. The nitrogen-pair oxygen defect in silicon 
    F. Berg Rasmussen, S. Öberg, R. Jones, C. Ewels, J. Goss, J. Miro, and P. Deák,
    Mater. Sci. Eng. B-Solid State Mater. Adv. Technol. 36, pp.91–95 (1996)[doi link]
     
  6. The nitrogen-pair oxygen defect in silicon 
    F. Berg Rasmussen, S. Öberg, R. Jones, C. Ewels, J. Goss, J. Miro, and P. Deák,
    in Early Stages of Oxygen Precipitation in Silicon, ed. R. Jones, Vol. 17 of S. High Technology, Kluwers Academic Press, Dordrecht, 1996.
     

1995

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  1. The NNO defect in silicon 
    F. Berg Rasmussen, S. Öberg, R. Jones, C. Ewels, J. Goss, J. Miro, P. Deák,
    Mater. Sci. Forum 196-, pp.791–795 (1995)
     
  2. The H2*defect in crystalline germanium 
    M. Budde, B. Bech Nielsen, R. Jones, S. Öberg, J. Goss,
    Mater. Sci. Forum 196-, pp.879–883 (1995)
     
  3. Theory of the NiH2complex in Si and the CuH2complex in GaAs 
    R. Jones, J. Goss, S. Öberg, P.R. Briddon, A. Resende,
    Mater. Sci. Forum 196-, pp.921–925 (1995)
     
  4. H interacting with intrinsic defects in Si 
    B. Bech Nielsen, L. Hoffmann, M. Budde, R. Jones, J. Goss, S. Öberg,
    Mater. Sci. Forum 196-, pp.933–937 (1995)
     
  5. Ni complexes in diamond 
    J. Goss, A. Resende, R. Jones, S. Öberg, P.R. Briddon,
    Mater. Sci. Forum 196-, pp.67–71 (1995)
     
  6. Theory of nickel and nickel-hydrogen complexes in silicon 
    R. Jones, S. Öberg, J. Goss, P.R. Briddon, A. Resende,
    Phys. Rev. Lett. 75, pp.2734–2737 (1995)[doi link]
     
  7. Hydrogen passivated defects in InP 
    C.P. Ewels, S. Öberg, P.R. Briddon, J. Goss, R. Jones, S.J. Breuer, R. Darwich, B. Pajot,
    Solid State Commun. 93, pp.459–460 (1995)
     
  8. The hydrogen complexes in gallium-arsenide and indium-phosphide doped with magnesium 
    R. Rahbi, B. Pajot, C.P. Ewels, S. Öberg, J. Goss, R. Jones, Y. Nissim, B. Theys, C. Blaauw,
    Solid State Commun. 93, pp.462–462 (1995)
     

1994

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  1. Theoretical and isotopic infrared-absorption investigations of nitrogen-oxygen defects in silicon 
    R. Jones, C. Ewels, J. Goss, J. Miro, P. Deák, S. Öberg, F. Berg Rasmussen,
    Semicond. Sci. Technol. 9, pp.2145–2148 (1994)[doi link]
     
  2. Ab initiocalculations of anharmonicity of the C-H stretch mode in HCN and GaAs 
    R. Jones, J. Goss, C. Ewels, S. Öberg,
    Phys. Rev. B 50, pp.8378–8388 (1994)[doi link]