Chemical solution deposition of Bi2WO6 thin films.

Using [Bi2W]1: precursor solutions were spin-coated onto platinised silicon.

4 layers; heated to 300 oC between layers, ramped to 600 oC at 10 o/min. and annealed at 600 o C for 1 hr.

SEM: surface & cross-section.

 

XRD of thin film from [Bi2W]1 precursor.

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