Publications (chronological)

Publications by YearPublications by topic

2020s

2023

Charge transfer due to defects in hexagonal boron nitride/graphene heterostructures: An ab initio study
Madhava Krishna Prasad, OA Al-Ani, JP Goss and JD Mar
Physical Review M
7
094003
2023
Charge Transfer and Quantum Emitters in Two-Dimensional Heterostructures: An Ab Initio Study
Madhava Krishna Prasad, OA Al-Ani, JP Goss and JD Mar
AIP conference proceedings
2743
020004
2023
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2022

Diamond (111) surface reconstruction and epitaxial graphene interface
BP Reed, ME Bathen, JWR Ash, CJ Meara, AA Zakharov, JP Goss, JW Wells, DA Evans and SP Cooil
Physical Review B
105
205304
2022

2021

Structure and electron affinity of the 4H–SiC (0001) surfaces: a methodological approach for polar systems
JMA Beattie, JP Goss, MJ Rayson and PR Briddon
Joural of Physics: Condensed Matter
33
165003
2021

2020

2010s

2019

2018

2017

2016

2015

2014

2013

2012

2011

Remote Plasma Atomic Layer Deposition of Strontium Titanate Films Using Sr(iPr₃Cp)₂ and Ti(OiPr)₄
G Dilliway, M Oliver, K Kwa, Z Zhou, S Mojarad, J Goss and A O'Neill
219^th ECS meeting abstract
2011

2010

2000s

2009

2008

2007

2006

2005

2004

2003

2002

2001

2000

1990s

1999

1998

Identification of the hydrogen-saturated self-interstitials in silicon and germanium
M Budde, B Bech Nielsen, P Leary, J Goss, R Jones, PR Briddon, S Öberg and SJ Breuer
Physical Review B
57
4397–4412
1998
Investigation of the Spatial Structure of a Capacitive Radiofrequency Discharge
CM Deegan, JP Goss, D Vender and MB Hopkins
Euro. Phys. Abs.
22
202
1998
Comparison Between Fluid Simulations and Experimentally Measured Profiles for an Inductive Ar Discharge in a Cylindrical Geometry
JP Goss, G Cunge, B Crowley, D Vender and MM Turner
Euro. Phys. Abs.
22
220
1998
Zero-Dimensional Model of a Low Pressure H₂ Discharge
R Zorat, JP Goss and D Vender
Euro. Phys. Abs.
22
350
1998

1997

Is H passivating Mg Acceptors Bond-centred in InP:Mg and Anti-bonded in GaAs:Mg?
R. Bouanani-Rahbi, B. Pajot, C.P. Ewels, S. Öberg, J Goss, R Jones, Y. Nissim, B. Theys, C. Blaauw,
Shallow Level Centers in Semiconductors, ed. C.A.J. Ammerlaan and B. Pajot, World Scientific, Singapore, (1997)
The hydrogen-saturated self-interstitial in silicon and germanium
M Budde, B Bech Nielsen, P Leary, J Goss, R Jones, PR Briddon, S Öberg and SJ Breuer
Materials Science Forum
258–263
35–40
1997
A First Principles Study Of Defects In Semiconductors
JP Goss
Thesis: Doctor of Philosophy in Physics in the Faculty of Science
University of Exeter
Jan 1997
A first principles study of interstitial Si in diamond
JP Goss, R Jones, SJ Breuer, PR Briddon and S Öberg
Materials Science Forum
258–263
781–786
1997
Comment on "Electronic structure of the N-V center in diamond: Theory"
JP Goss, R Jones, PR Briddon, G Davies, AT Collins, A Mainwood, JA van Wyk, JM Baker, ME Newton, AM Stoneham and SC Lawson
Physical Review B
56
16031–16032
1997
(C_As)₂-hydrogen defects in GaAs: A first-principles study
JP Goss, R Jones, S Öberg and PR Briddon
Physical Review B
55
15576–15580
1997
Breakdown of the vacancy model for impurity-vacancy defects in diamond
R Jones, JP Goss, PR Briddon and S Öberg
Materals Science Forum
258–263
775–780
1997
N2 and N4 optical transitions in diamond: A breakdown of the vacancy model
R Jones, JP Goss, PR Briddon and S Öberg
Physical Review B
56
R1654–R1656
1997
Theory of gold-hydrogen complexes in silicon
A Resende, J Goss, PR Briddon, S Öberg and R Jones
Materials Science Forum
258–263
295–300
1997

1996

The nitrogen-pair oxygen defect in silicon
F Berg Rasmussen, S Öberg, R Jones, C Ewels, J Goss, J Miro and P Deák
Early Stages of Oxygen Precipitation in Silicon
R Jones
17
NATO ASI - 3 High Technology
Kluwers Academic Press, Dordrecht
1996
The nitrogen-pair oxygen defect in silicon
F Berg Rasmussen, S Öberg, R Jones, C Ewels, J Goss, J Miro and P Deák
Materials Science and Engineering: B
36
91–95
1996
Local modes of the H₂ dimer in germanium
M Budde, B Bech Nielsen, R Jones, J Goss and S Öberg
Physical Review B
54
5485–5494
1996
First principles theory of impurity-vacancy complexes in diamond
JP Goss, R Jones, SJ Breuer, PR Briddon, and S Öberg
Proceedings of the 23^rd International Conference on the Physics of Semiconductors
M Scheffler and R Zimmermann
2577–2580
World Scientific, London
1996
The twelve-line 1.682eV luminescence center in diamond and the vacancy-silicon complex
JP Goss, R Jones, SJ Breuer, PR Briddon and S Öberg
Physical Review Letters
77
3041–3044
1996
Limitations to n-type doping in diamond: The phosphorus-vacancy complex
R Jones, JE Lowther and J Goss
Applied Physics Letters
69
2489–2491
1996

1995

1994