ATiO₃

1. 

   Density functional calculations of carbon substituting for Zr in barium zirconate

   M Al-Hadidi, JP Goss, OA Al-Ani, PR Briddon and MJ Rayson

   Journal of Crystal Growth

   468

   728–731

   2017
2. 

   Association of oxygen vacancies with carbon impurity in strontium titanate: first principles calculations

   M Al-Hadidi, JP Goss, PR Briddon, R Al-Hamadany, M Ahmed and MJ Rayson

   Ferroelectrics

   497

   9–14

   2016
3. 

   First-principles investigation of carbon substitution for lead in ferroelectric lead titanate

   M Al-Hadidi, JP Goss, PR Briddon, R Al-Hamadany, M Ahmed and MJ Rayson

   Ferroelectrics

   498

   12–17

   2016
4. 

   Carbon impurities in SrTiO₃ from first principles

   M Al-Hadidi, JP Goss, PR Briddon, R AL-Hamadany, M Ahmed and MJ Rayson

   Modelling and Simulation in Materials Science and Engineering

   23

   015002

   2015
5. 

   Density functional simulation of carbon at the titanium site in perovskite barium titanate

   M Al-Hadidi, JP Goss, PR Briddon, R AL-Hamadany, M Ahmed and MJ Rayson

   IOP Conf. Series: Materials Science and Engineering

   80

   012002

   2015
6. 

   Impact of Crystalline Orientation on the Switching Field in Barium Titanate Using Piezoresponse Force Spectroscopy

   NK Ponon, DJR Appleby, E Arac, KSK Kwa, JP Goss, U Hannemann, PK Petrov, NM Alford and A O'Neill

   MRS Proceedings

   1652

   2014
7. 

   Carbon at the Ti site in strontium titanate from first principles

   Meaad AL-Hadidi, JP Goss, PR Briddon, Raied AL-Hamadany and ME Ahmed

   Journal of Physics Conference Series

   472

   012006

   2013
8. 

   Oxygen vacancy migration in compressively strained SrTiO₃

   Raied AL-Hamadany, JP Goss, PR Briddon, Shahin A Mojarad, Meaad AL-Hadidi, MJ Rayson and AG O'Neill

   Journal of Applied Physics

   113

   024108

   8

   2013
9. 

   Impact of tensile strain on the oxygen vacancy migration in SrTiO₃: Density functional theory calculations

   Raied AL-Hamadany, JP Goss, PR Briddon, Shahin A Mojarad, AG O'Neill and MJ Rayson

   Journal of Applied Physics

   113

   224108

   8

   2013
10. 

    Anomalous resistive switching phenomenon

    SA Mojarad, JP Goss, KSK Kwa, PK Petrov, B Zou, N Alford and A O'Neill

    Journal of Applied Physics

    112

    124516

    7

    2012
11. 

    Leakage current asymmetry and resistive switching behavior of SrTiO₃

    SA Mojarad, JP Goss, KSK Kwa, Z Zhou, RAS Al-Hamadany, DJR Appleby, NK Ponon and A O'Neill

    Applied Physics Letters

    101

    173507

    3

    2012
12. 

    A comprehensive study on the leakage current mechanisms of Pt/SrTiO₃/Pt capacitor

    SA Mojarad, KSK Kwa, JP Goss, Z Zhou, NK Ponon, DJR Appleby, RAS Al-Hamadany and A O'Neill

    Journal of Applied Physics

    111

    014503

    6

    2012
13. 

    Remote Plasma Atomic Layer Deposition of Strontium Titanate Films Using Sr(iPr₃Cp)₂ and Ti(OiPr)₄

    G Dilliway, M Oliver, K Kwa, Z Zhou, S Mojarad, J Goss and A O'Neill

    219^th ECS meeting abstract

    2011

1. 

   Diamond (111) surface reconstruction and epitaxial graphene interface

   BP Reed, ME Bathen, JWR Ash, CJ Meara, AA Zakharov, JP Goss, JW Wells, DA Evans and SP Cooil

   Physical Review B

   105

   205304

   2022
2. 

   Nitrogen in Diamond

   MNR Ashfold, JP Goss, BL Green, PW May, ME Newton and CV Peaker

   Chemical Review

   120

   5745–5794

   2020
3. 

   Hyperfine interaction of H-divacancy in diamond

   MK Atumi, JP Goss, PR Briddon, AM Gsiea and MJ Rayson

   Results in Physics

   16

   102860

   2020
4. 

   Doubly-charged silicon vacancy center, Si-N complexes, and photochromism in N and Si co-doped diamond

   BG Breeze, CJ Meara, XX Wu, CP Michaels, R Gupta, PL Diggle, MW Dale, BL Cann, T Ardon, UFS D'Haenens-Johansson, I Friel, MJ Rayson, PR Briddon, JP Goss, ME Newton and BL Green

   Physical Review B

   101

   184115

   2020
5. 

   An Ultrafast Shakedown Reveals the Energy Landscape, Relaxation Dynamics, and Concentration of the N₃VH⁰ Defect in Diamond

   DJL Coxon, M Staniforth, BG Breeze, SE Greenough, JP Goss, M Monti, J Lloyd-Hughes, VG Stavros and ME Newton

   Journal of Physical Chemistry Letters

   11

   6677–6683

   2020
6. 

   A computational study of nanodiamond surface radicals and nitrogen-vacancy charge fluctuations.

   CJ Meara, MJ Rayson, PR Briddon and JP Goss

   Journal of Physics and Chemistry of Solids

   146

   109637

   2020
7. 

   Modeling NV charge stability in nanodiamonds with DFT

   CJ Meara, PR Briddon, MJ Rayson and JP Goss

   Bulletin of the American Physical Society

   65

   F62.00002

   2020
8. 

   Density functional investigation of boron incorporation in silicon-vacancy complexes

   CJ Meara, MJ Rayson, PR Briddon and JP Goss

   Diamond and Related Materials

   109

   108016

   2020
9. 

   Electron-affinity and surface-stability of aluminium-oxide terminated diamond surfaces

   JMA Beattie, JP Goss, MJ Rayson and PR Briddon

   Diamond and Related Materials

   94

   137–145

   2019
10. 

    Silicon and germanium terminated (001)-(2×1) diamond surface

    JMA Beattie, JP Goss, MJ Rayson and PR Briddon

    Journal of Physics: Condensed Matter

    35

    3935001

    2019
11. 

    Density functional theory study on magnetically detecting positively charged nitrogen-vacancy center in diamond

    CJ Meara, MJ Rayson, PR Briddon and JP Goss

    Physical Review B

    100

    104108

    2019
12. 

    Assignment of ¹³C hyperfine interactions in the P1-center in diamond

    CV Peaker, MK Atumi, JP Goss, PR Briddon, AB Horsfall, MJ Rayson and R Jones

    Diamond and Related Materials

    70

    118–123

    2016
13. 

    Diffusion of nitrogen in diamond and the formation of A-centres

    R Jones, JP Goss, H Pinto and DW Palmer

    Diamond and Related Materials

    53

    35–39

    2015
14. 

    Identification of the structure of the 3107 cm⁻¹ H-related defect in diamond

    JP Goss, PR Briddon, V Hill, R Jones and MJ Rayson

    Journal of Physics: Condensed Matter

    26

    145801

    6

    2014
15. 

    Unexpected change in the electron affinity of diamond caused by the ultra-thin transition metal oxide films

    AK Tiwari, JP Goss, PR Briddon, AB Horsfall, NG Wright, R Jones and MJ Rayson

    Europhysics Letters

    108

    46005

    6

    2014
16. 

    Atomistic modeling of the polarization of nitrogen centers in diamond due to growth surface orientation

    MK Atumi, JP Goss, PR Briddon and MJ Rayson

    Physical Review B

    88

    245301

    13

    2013
17. 

    Hyperfine interactions at nitrogen interstitial defects in diamond

    MK Atumi, JP Goss, PR Briddon, FE Shrif and MJ Rayson

    Journal of Physics: Condensed Matter

    25

    065802

    8

    2013
18. 

    Transition metal oxide-diamond interfaces for electron emission applications

    Amit K Tiwari, Jonathan P Goss, Patrick R Briddon, Nick G Wright, Alton B Horsfall and Mark J Rayson

    Materials Science Forum

    740–742

    761–764

    2013
19. 

    Ultra thin transition metal oxide coatings on diamond for thermionic applications

    Amit K Tiwari, Jonathan P Goss, Patrick R Briddon, Nick G Wright, Alton B Horsfall and Mark J Rayson

    MRS Proceedings

    1511

    2013
20. 

    Nano-scale vacuum gap thermo-tunnel devices for energy harvesting applications

    Amit K Tiwari, Jonathan P Goss, Nick G Wright and Alton B Horsfall

    MRS Proceedings

    1490

    167–172

    2013
21. 

    First-principles study of hydrogen and fluorine intercalation into graphene-SiC(0001) interface

    A Markevich, R Jones, S Öberg, MJ Rayson, JP Goss and PR Briddon

    Physical Review B

    86

    045453

    9

    2012
22. 

    On the diffusion of NV defects in diamond

    H Pinto, R Jones, DW Palmer, JP Goss, PR Briddon and S Öberg

    Physica Status Solidi A

    209

    1765–1768

    2012
23. 

    First-principles studies of the effect of (001) surface terminations on the electronic properties of the negatively charged nitrogen-vacancy defect in diamond

    H Pinto, R Jones, DW Palmer, JP Goss, AK Tiwari, PR Briddon, NG Wright, AB Horsfall, MJ Rayson and S Öberg

    Physical Review B

    86

    045313

    8

    2012
24. 

    Ab Initio Studies of Fluorine Passivation on the Electronic Structure of the NV⁻ Defect in Nanodiamond

    H Pinto, DW Palmer, R Jones, JP Goss, PR Briddon and S Öberg

    Journal of Nanoscience and Nanotechnology

    12

    8589–8593

    2012
25. 

    Density functional simulations of transition metal terminated (001)-diamond surfaces

    Amit K Tiwari, Jonathan P Goss, Patrick Briddon, Nick G Wright and Alton B Horsfall

    Materials Science Forum

    717–720

    1311–1314

    2012
26. 

    Thermodynamic stability and electronic properties of F- and Cl-terminated diamond

    AK Tiwari, JP Goss, PR Briddon, NG Wright, AB Horsfall, R Jones, H Pinto and MJ Rayson

    Physica Status Solidi A

    209

    1709–1714

    2012
27. 

    Bromine functionalisation of diamond: An ab initio study

    AK Tiwari, JP Goss, PR Briddon, NG Wright, AB Horsfall and MJ Rayson

    Physica Status Solidi A

    209

    1703–1708

    2012
28. 

    Effect of different surface coverages of transition metals on the electronic and structural properties of diamond

    AK Tiwari, JP Goss, PR Briddon, NG Wright, AB Horsfall and MJ Rayson

    Physica Status Solidi A-Appl. Mat.

    209

    1697–1702

    2012
29. 

    Electronic and structural properties of diamond (001) surfaces terminated by selected transition metals

    AK Tiwari, JP Goss, PR Briddon, NG Wright, AB Horsfall and MJ Rayson

    Physical Review B

    86

    155301

    11

    2012
30. 

    Calculated strain response of vibrational modes for H-containing point defects in diamond

    JP Goss and PR Briddon

    Physical Chemistry Chemical Physics

    13

    11488–11494

    2011
31. 

    Bistable N₂–H complexes: The first proposed structure of a H-related colour-causing defect in diamond

    JP Goss, CP Ewels, PR Briddon and E Fritsch

    Diamond and Related Materials

    20

    896–901

    2011
32. 

    Point and extended defects in chemical vapour deposited diamond

    H Pinto, R Jones, JP Goss and PR Briddon

    Journal of Physics Conference Series

    281

    012023

    2011
33. 

    Theory of the surface effects on the luminescence of the NV⁻ defect in nanodiamond

    H Pinto, R Jones, DW Palmer, JP Goss, PR Briddon and S Öberg

    Physica Status Solidi A

    208

    2045–2050

    2011
34. 

    Calculated electron affinity and stability of halogen-terminated diamond

    AK Tiwari, JP Goss, PR Briddon, NG Wright, AB Horsfall, R Jones, H Pinto and MJ Rayson

    Physical Review B

    84

    245305

    9

    2011
35. 

    Single substitutional nitrogen defects revealed as electron acceptor states in diamond using ultrafast spectroscopy

    R Ulbricht, ST van der Post, JP Goss, PR Briddon, R Jones, RUA Khan and M Bonn

    Physical Review B

    84

    165202

    9

    2011
36. 

    EPR of a defect in CVD diamond involving both silicon and hydrogen that shows preferential alignment

    UFS D'Haenens-Johansson, AM Edmonds, ME Newton, JP Goss, PR Briddon, JM Baker, PM Martineau, RUA Khan, DJ Twitchen and SD Williams

    Physical Review B

    82

    155205

    10

    2010
37. 

    A density functional theory study of models for the N3 and OK1 EPR centres in diamond

    KM Etmimi, JP Goss, PR Briddon and AM Gsiea

    Journal of Physics: Condensed Matter

    22

    385502

    8

    2010
38. 

    Optically active point defects in high quality single crystal diamond

    JP Goss, PR Briddon, H Pinto and R Jones

    Physica Status Solidi A

    207

    2049–2053

    2010
39. 

    Identification of the di-nitrogen ⟨001⟩ split interstitial H1a in diamond

    S Liggins, ME Newton, JP Goss, PR Briddon and D Fisher

    Physical Review B

    81

    085214

    7

    2010
40. 

    Nitrogen-pair paramagnetic defects in diamond: A density functional study

    KM Etmimi, ME Ahmed, PR Briddon, JP Goss and AM Gsiea

    Physical Review B

    79

    205207

    11

    2009
41. 

    Density functional studies of muonium in nitrogen-aggregate containing diamond: the Mu_X centre.

    KM Etmimi, JP Goss, PR Briddon and AM Gsiea

    Journal of Physics: Condensed Matter

    21

    364211

    6

    2009
42. 

    Density functional simulations of noble-gas impurities in diamond

    JP Goss, RJ Eyre, PR Briddon and A Mainwood

    Physical Review B

    80

    085204

    7

    2009
43. 

    Acceptor level of nitrogen in diamond and the 270-nm absorption band

    R Jones, JP Goss and PR Briddon

    Physical Review B

    80

    033205

    4

    2009
44. 

    Model thermodynamics and the role of free-carrier energy at high temperatures: Nitrogen and boron pairing in diamond.

    RM MacLeod, SW Murray, JP Goss, PR Briddon and RJ Eyre

    Physical Review B

    80

    054106

    7

    2009
45. 

    Electron paramagnetic resonance of sulfur at a split-vacancy site in diamond

    JM Baker, JA van Wyk, JP Goss and PR Briddon

    Physical Review B

    78

    235203

    9

    2008
46. 

    Dissociation of B-H pairs in diamond as enhanced by electronic excitation and electron capture: Computational modeling

    JP Goss and PR Briddon

    Physical Review B

    77

    035211

    7

    2008
47. 

    Bound substitutional impurity pairs in diamond: a density functional study

    JP Goss, RJ Eyre and PR Briddon

    Journal of Physics: Condensed Matter

    20

    085217

    9

    2008
48. 

    Theoretical models for doping diamond for semiconductor applications

    JP Goss, RJ Eyre and PR Briddon

    Physica Status Solidi B

    245

    1679–1700

    2008
49. 

    Theoretical models for doping diamond for semiconductor applications

    JP Goss, RJ Eyre and PR Briddon

    Physics and applications of CVD diamond

    S Koizumi, CE Nebel and M Nesladek

    Wiley-VCH

    8

    199–236

    2008
50. 

    Multi-impurity complexes for n-type diamond: a computational study

    RJ Eyre, JP Goss, PR Briddon and MG Wardle

    Physica Status Solidi A

    204

    2971–2977

    2007
51. 

    Theoretical study of Li and Na as n-type dopants for diamond

    JP Goss and PR Briddon

    Physical Review B

    75

    075202

    9

    2007
52. 

    Density functional simulations of silicon-containing point defects in diamond

    JP Goss, PR Briddon and MJ Shaw

    Physical Review B

    76

    075204

    11

    2007
53. 

    A theoretical study of Li as n type dopants for diamond: the role of aggregation

    JP Goss, RJ Eyre and PR Briddon

    Physica Status Solidi A

    204

    2978–2984

    2007
54. 

    Transfer Doping of diamond via 2,3-dichloro-5,6-dicyano-1,4-benzoquinone (DDQ)

    JP Goss, RJ Eyre and PR Briddon

    Physica Status Solidi A

    204

    2903–2908

    2007
55. 

    Metastable Frenkel pairs and the W11–W14 electron paramagnetic resonance centers in diamond

    JP Goss, MJ Rayson, PR Briddon and JM Baker

    Physical Review B

    76

    045203

    9

    2007
56. 

    Theory of boron aggregates in diamond: First-principles calculations

    JP Goss and PR Briddon

    Physical Review B

    73

    085204

    8

    2006
57. 

    Donor levels for selected n-type dopants in diamond: a computational study on the effect of supercell-size

    JP Goss, PR Briddon and RJ Eyre

    Physical Review B

    74

    245217

    7

    2006
58. 

    Platelets and the ⟨110⟩a₀/4 {001} stacking fault in diamond

    JP Goss, PR Briddon, R Jones and MI Heggie

    Physical Review B

    73

    115204

    6

    2006
59. 

    Theory of Jahn–Teller distortions of the P donor in diamond

    RJ Eyre, JP Goss, PR Briddon and JP Hagon

    Journal of Physics: Condensed Matter

    17

    5831–5387

    2005
60. 

    Vacancy-impurity complexes and limitations for implantation doping of diamond

    JP Goss, PR Briddon, MJ Rayson, SJ Sque and R Jones

    Physical Review B

    72

    035214

    11

    2005

    
    

    ibid

    73

    199904(E)

    1

    2006
61. 

    Quantum Mechanical Modeling of the Structure and Doping Properties of Defects in Diamond

    JP Goss, PR Briddon, R Sachdeva, R Jones and SJ Sque

    AIP conference proceedings

    722

    91–94

    2005
62. 

    Comment on "a/[110] Stacking Fault Model for Platelets in Diamond"

    R Jones, MI Heggie and JP Goss

    Physical Review Letters

    95

    139601

    2005
63. 

    Importance of Quantum Tunneling in Vacancy-Hydrogen Complexes in Diamond

    MJ Shaw, PR Briddon, JP Goss, MJ Rayson, A Kerridge, AH Harker and AM Stoneham

    Physical Review Letters

    95

    105502

    4

    2005

    
    

    ibid

    219901(E)

    1

    2005
64. 

    First-principles study of C₆₀ and C₆₀F₃₆ as transfer dopants for p-type diamond

    SJ Sque, R Jones, JP Goss, PR Briddon and S Öberg

    Journal of Physics: Condensed Matter

    17

    L21–L26

    2005
65. 

    Novel Doping of Diamond using C₆₀

    SJ Sque, R Jones, JP Goss, PR Briddon and S Öberg

    CSAR Focus

    13

    13–15

    2005
66. 

    The lattice location of Ni in diamond: a theoretical study

    JP Goss, PR Briddon, R Jones and S Öberg

    Journal of Physics: Condensed Matter

    16

    4567–4578

    2004
67. 

    Donor and acceptor states in diamond

    JP Goss, PR Briddon, R Jones and S Sque

    Diamond and Related Materials

    13

    684–690

    2004
68. 

    Interstitial nitrogen and its complexes in diamond

    JP Goss, PR Briddon, S Papagiannidis and R Jones

    Physical Review B

    70

    235208

    15

    2004
69. 

    Boron-hydrogen complexes in diamond

    JP Goss, PR Briddon, SJ Sque and R Jones

    Physical Review B

    69

    165215

    8

    2004
70. 

    Shallow donors in diamond: Chalcogens, pnictogens, and their hydrogen complexes

    SJ Sque, R Jones, JP Goss and PR Briddon

    Physical Review Letters

    92

    017402

    4

    2004
71. 

    Theory of hydrogen in diamond

    JP Goss

    Journal of Physics: Condensed Matter

    15

    R551–R580

    2003
72. 

    The vacancy-nitrogen-hydrogen complex in diamond: a potential deep centre in chemical vapour deposited material

    JP Goss, PR Briddon, R Jones and S Sque

    Journal of Physics: Condensed Matter

    15

    S2903–S2911

    2003
73. 

    Deep hydrogen traps in heavily B-doped diamond

    JP Goss, PR Briddon, R Jones, Z Teukam, D Ballutaud, F Jomard, J Chevallier, M Bernard and A Deneuville

    Physical Review B

    68

    235209

    10

    2003
74. 

    Extended defects in diamond: The interstitial platelet

    JP Goss, BJ Coomer, R Jones, CJ Fall, PR Briddon and S Öberg

    Physical Review B

    67

    165208

    15

    2003
75. 

    First principles calculation of zero-field splitting tensors

    MJ Rayson, JP Goss and PR Briddon

    Physica B

    340

    673–676

    2003
76. 

    Shallow donors in diamond: pnictogen and chalcogen hydrogen defects

    SJ Sque, R Jones, JP Goss and PR Briddon

    Physica B

    340

    80–83

    2003
77. 

    Stress tensors and dilatation of interstitial defects in diamond

    JP Goss, R Jones and PR Briddon

    Physical Review B

    65

    035203

    8

    2002
78. 

    Theory of hydrogen in diamond

    JP Goss, R Jones, MI Heggie, CP Ewels, PR Briddon and S Öberg

    Physical Review B

    65

    115207

    13

    2002
79. 

    Glide dislocations in diamond: first-principles calculations of similarities with and differences from silicon and the effects of hydrogen

    MI Heggie, CP Ewels, N Martsinovich, S Scarle, R Jones, JP Goss, B Hourahine and PR Briddon

    Journal of Physics: Condensed Matter

    14

    12689–12696

    2002
80. 

    Modelling electron energy-loss spectra of dislocations in silicon and diamond

    CJ Fall, JPG Goss, R Jones, PR Briddon, AT Blumenau and T Frauenheim

    Physica B

    308

    577–580

    2001
81. 

    Interstitial aggregates in diamond

    JP Goss, BJ Coomer, R Jones, TD Shaw, PR Briddon and S Öberg

    Diamond and Related Materials

    10

    434–438

    2001
82. 

    Self-interstitial aggregation in diamond

    JP Goss, BJ Coomer, R Jones, TD Shaw, PR Briddon, M Rayson and S Öberg

    Physical Review B

    63

    195208

    14

    2001
83. 

    P-type surface doping of diamond: a first-principles study

    JP Goss, B Hourahine, R Jones, MI Heggie and PR Briddon

    Journal of Physics: Condensed Matter

    13

    8973–8978

    2001
84. 

    Volume expansion and stress tensors for self-interstitial aggregates in diamond

    JP Goss, R Jones and PR Briddon

    Physica B

    308

    604–607

    2001
85. 

    First principles studies of H in diamond

    JP Goss, R Jones, MI Heggie, CP Ewels, PR Briddon and S Öberg

    Physica Status Solidi A

    186

    263–268

    2001
86. 

    First principles study of the of the self-interstitial defect in diamond

    JP Goss, R Jones, TD Shaw, MJ Rayson and PR Briddon

    Physica Status Solidi A

    186

    215–220

    2001
87. 

    Small aggregates of interstitials and models for platelets in diamond

    JP Goss, BJ Coomer, R Jones, CJ Fall, CD Latham, PR Briddon and S Öberg

    Journal of Physics: Condensed Matter

    12

    10257–10261

    2000
88. 

    Data Review: Theory of aggregation of nitrogen in diamond

    R Jones and JP Goss

    A5.1

    Properties, Growth and applications of Diamond

    MH Nazaré and AJ Neves

    INSPEC, IEEE, London

    2000
89. 

    The divacancy in silicon and diamond

    BJ Coomer, A Resende, JP Goss, R Jones, S Öberg and PR Briddon

    Physica B

    274

    520–523

    1999
90. 

    A First Principles Study Of Defects In Semiconductors

    JP Goss

    Thesis: Doctor of Philosophy in Physics in the Faculty of Science

    University of Exeter

    Jan 1997
91. 

    A first principles study of interstitial Si in diamond

    JP Goss, R Jones, SJ Breuer, PR Briddon and S Öberg

    Materials Science Forum

    258–263

    781–786

    1997
92. 

    Comment on "Electronic structure of the N-V center in diamond: Theory"

    JP Goss, R Jones, PR Briddon, G Davies, AT Collins, A Mainwood, JA van Wyk, JM Baker, ME Newton, AM Stoneham and SC Lawson

    Physical Review B

    56

    16031–16032

    1997
93. 

    Breakdown of the vacancy model for impurity-vacancy defects in diamond

    R Jones, JP Goss, PR Briddon and S Öberg

    Materals Science Forum

    258–263

    775–780

    1997
94. 

    N2 and N4 optical transitions in diamond: A breakdown of the vacancy model

    R Jones, JP Goss, PR Briddon and S Öberg

    Physical Review B

    56

    R1654–R1656

    1997
95. 

    First principles theory of impurity-vacancy complexes in diamond

    JP Goss, R Jones, SJ Breuer, PR Briddon, and S Öberg

    Proceedings of the 23^rd International Conference on the Physics of Semiconductors

    M Scheffler and R Zimmermann

    2577–2580

    World Scientific, London

    1996
96. 

    The twelve-line 1.682eV luminescence center in diamond and the vacancy-silicon complex

    JP Goss, R Jones, SJ Breuer, PR Briddon and S Öberg

    Physical Review Letters

    77

    3041–3044

    1996
97. 

    Limitations to n-type doping in diamond: The phosphorus-vacancy complex

    R Jones, JE Lowther and J Goss

    Applied Physics Letters

    69

    2489–2491

    1996
98. 

    Ni complexes in diamond

    J Goss, A Resende, R Jones, S Öberg and PR Briddon

    Materials Science Forum

    196–201

    67–71

    1995

Germanium

1. 

   Extended Point Defects in Crystalline Materials: Ge and Si

   NEB Cowern, S Simdyankin, C Ahn, NS Bennett, JP Goss, J-M Hartmann, A Pakfar, S Hamm, J Valentin, E Napolitani, D De Salvador, E Bruno and S Mirabella

   Physical Review Letters

   110

   155501

   5

   2013
2. 

   The self-interstitial in silicon and germanium

   R Jones, A Carvalho, JP Goss and PR Briddon

   Materials Science and Engineering B

   159–160

   112–116

   2009
3. 

   First-principles study of the diffusion mechanisms of the self-interstitial in germanium

   A Carvalho, R Jones, JP Goss, C Janke, S Öberg and PR Briddon

   Journal of Physics: Condensed Matter

   20

   135220

   5

   2008
4. 

   Self-interstitials and Frenkel pairs in electron-irradiated germanium

   A Carvalho, R Jones, J Goss, C Janke, J Coutinho, S Öberg and PR Briddon

   Physica B

   401–402

   495–498

   2007
5. 

   The self-interstitial in germanium

   A Carvalho, R Jones, C Janke, JP Goss, PR Briddon, J Coutinho and S Öberg

   Physical Review Letters

   99

   175502

   4

   2007
6. 

   Theory of interstitial aggregates in germanium

   S Birner, JP Goss, R Jones, PR Briddon and S Öberg

   Proceedings of the 2^nd ENDEASD Workshop, Kista, Sweden

   2000
7. 

   Identification of the hydrogen-saturated self-interstitials in silicon and germanium

   M Budde, B Bech Nielsen, P Leary, J Goss, R Jones, PR Briddon, S Öberg and SJ Breuer

   Physical Review B

   57

   4397–4412

   1998
8. 

   The hydrogen-saturated self-interstitial in silicon and germanium

   M Budde, B Bech Nielsen, P Leary, J Goss, R Jones, PR Briddon, S Öberg and SJ Breuer

   Materials Science Forum

   258–263

   35–40

   1997
9. 

   Local modes of the H₂ dimer in germanium

   M Budde, B Bech Nielsen, R Jones, J Goss and S Öberg

   Physical Review B

   54

   5485–5494

   1996
10. 

    The H*
    2 defect in crystalline germanium

    M Budde, B Bech Nielsen, R Jones, S Öberg and J Goss

    Materials Science Forum

    196–201

    879–883

    1995

Graphene

1. 

   Charge transfer due to defects in hexagonal boron nitride/graphene heterostructures: An ab initio study

   Madhava Krishna Prasad, OA Al-Ani, JP Goss and JD Mar

   Physical Review M

   in press

   2023
2. 

   Charge Transfer and Quantum Emitters in Two-Dimensional Heterostructures: An Ab Initio Study

   Madhava Krishna Prasad, OA Al-Ani, JP Goss and JD Mar

   AIP conference proceedings

   2743

   020004

   2023

   /SPAN>
3. 

   Electrical characterization of epitaxial graphene field-effect transistors with high-κ Al₂O₃ gate dielectric fabricated on SiC substrates

   T Hopf, K Vassilevski, E Escobedo-Cousin, PJ King, NG Wright, A O'Neill, AB Horsfall, JP Goss, GH Wells and M Hunt

   Materials Science Forum

   821–823

   937–940

   2015
4. 

   Facile technique for the removal of metal contamination from graphene

   GH Wells, MRC Hunt, T Hopf, V Vassilevski, E Escobedo-Cousin, AB Horsfall, JP Goss,and A O'Neill

   Journal of Vacuum Science and Technology B

   33

   051802

   2015
5. 

   Solid phase growth of graphene on silicon carbide by nickel silicidation: graphene formation mechanisms

   E Escobedo-Cousin, K Vassilevski, T Hopf, N Wright, A O'Neill, A Horsfall and J Goss

   Materials Science Forum

   778–780

   1162–1165

   2014
6. 

   The Low Frequency Noise Spectrum in Gated Epitaxial Graphene Field Effect Transistors

   DK Gaskill, HK Chan, VD Wheeler, VK Nagareddy, LO Nyakiti, A Nath, RL Myers-Ward, ZR Robinson, NY Garces, MV Rao, JP Goss, NG Wright, CR Eddy Jr, AB Horsfall

   Bulletin of the APS

   2014
7. 

   Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature

   T Hopf, K Vassilevski, E Escobedo-Cousin, PJ King, NG Wright, A O'Neill, AB Horsfall, JP Goss, GH Wells and MRC Hunt

   Journal of Applied Physics

   116

   154504

   2014
8. 

   Optimizing the vacuum growth of epitaxial graphene on 6H-SiC

   T Hopf, K Vassilevski, E Escobedo-Cousin, N Wright, A O'Neill, A Horsfall, J Goss, A Barlow, G Wells and M Hunt

   Materials Science Forum

   778–780

   1154–1157

   2014
9. 

   Determination of the adhesion energy of graphene on SiC(0001) via measurement of pleat defects

   GH Wells, T Hopf,. V Vassilevski, E Escobedo-Cousin, NG Wright, AB Horsfall, JP Goss, AG O’Neill and MRC Hunt

   Applied Physics Letters

   105

   193109

   4

   2014
10. 

    Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon

    E Escobedo-Cousin, K Vassilevski, T Hopf, N Wright, A O'Neill, A Horsfall, J Goss and P Cumpson

    Journal of Applied Physics

    113

    114309

    11

    2013
11. 

    Optimising the Growth of Few-Layer Graphene on Silicon Carbide by Nickel Silicidation

    E Escobedo-Cousin, K Vassilevski, T Hopf, N Wright, A O'Neill, A Horsfall, J Goss and P Cumpson

    Materials Science Forum

    740–742

    121–124

    2013
12. 

    Detection of polar chemical vapors using epitaxial graphene grown on SiC (0001)

    VK Nagareddy, HK Chan, SC Hernandez, VD Wheeler, RL Myers-Ward, LO Nyakiti, CR Eddy Jr, SG Walton, JP Goss, NG Wright, DK Gaskill and AB Horsfall

    Applied Physics Letters

    102

    173103

    5

    2013
13. 

    Improved Chemical Detection and Ultra-Fast Recovery Using Oxygen Functionalized Epitaxial Graphene Sensors

    VK Nagareddy, HK Chan, SC Hernandez, VD Wheeler, LO Nyakiti, RL Myers-Ward, CR Eddy Jr, JP Goss, NG Wright, SG Walton, DK Gaskill and AB Horsfall

    IEEE Sensors Journal

    13

    2810–2817

    2013
14. 

    High Temperature Stability of Oxygen Functionalized Epitaxial Graphene/Metal Contact Interfaces

    VK Nagareddy, SC Hernández, VD Wheeler, LO Nyakiti, RL Myers-Ward, CR Eddy Jr, JP Goss, NG Wright, SG Walton, DK Gaskill and AB Horsfall

    Materials Science Forum

    740–742

    145–148

    2013
15. 

    Local Solid Phase Epitaxy of Few-Layer Graphene on Silicon Carbide

    E Escobedo-Cousin, K Vassilevski, I Nikitina, N Wright, A O'Neill, A Horsfall and J Goss

    Materials Science Forum

    717–720

    629–632

    2012
16. 

    First-principles study of hydrogen and fluorine intercalation into graphene-SiC(0001) interface

    A Markevich, R Jones, S Öberg, MJ Rayson, JP Goss and PR Briddon

    Physical Review B

    86

    045453

    9

    2012
17. 

    Temperature Dependent Chemical Sensitivity of Epitaxial Graphene

    VK Nagareddy, DK Gaskill, JL Tedesco, RL Myers-Ward, CR Eddy Jr, JP Goss, NG Wright and AB Horsfall

    Materials Science Forum

    717–720

    691–694

    2012
18. 

    Oxygen functionalised epitaxial graphene sensors for enhanced polar organic chemical vapour detection

    VK Nagareddy, JP Goss, NG Wright, AB Horsfall, SC Hernandez, VD Wheeler, LO Nyakiti, RL Myers-Ward, CR Eddy Jr, SG Walton and DK Gaskill

    Proceedings of IEEE Sensors 2012

    1–4

    2012
19. 

    Influence of intercalated silicon on the transport properties of graphene

    JP Goss, PR Briddon, VK Nagareddy, NG Wright, AB Horsfall, JD Caldwell, DK Gaskill and GG Jernigan

    Materials Science Forum

    679–680

    793–796

    2011
20. 

    High temperature measurements of metal contacts on epitaxial graphene

    VK Nagareddy, IP Nikitina, DK Gaskill, JL Tedesco, RL Myers-Ward, CR Eddy, JP Goss, NG Wright and AB Horsfall

    Applied Physics Letters

    99

    073506

    3

    2011
21. 

    Density functional simulations of physisorbed and chemisorbed single graphene layers on 4H-SiC (0001), (0001̅) and 4H-SiC:H surface

    JP Goss, PR Briddon, NG Wright and AB Horsfall

    Materials Science Forum

    645–648

    619–622

    2010
22. 

    Mechanisms of doping graphene

    H Pinto, R Jones, JP Goss and PR Briddon

    Physica Status Solidi A

    207

    2131–2136

    2010
23. 

    Unexpected change in the electronic properties of the Au-graphene interface caused by toluene

    H Pinto, R Jones, JP Goss and PR Briddon

    Physical Review B

    82

    125407

    8

    2010
24. 

    p-type doping of graphene with F4-TCNQ

    H Pinto, R Jones, JP Goss and PR Briddon

    Journal of Physics: Condensed Matter (Fast Track Communications)

    21

    402001

    3

    2009
25. 

    Doping of graphene: Density functional calculations of charge transfer between GaAs and graphene and carbon nanostructures.

    TAG Eberlein, R Jones, JP Goss and PR Briddon

    Physical Review B

    78

    045403

    5

    2008

III-Vs and II-VIs

1. 

   Charge transfer due to defects in hexagonal boron nitride/graphene heterostructures: An ab initio study

   Madhava Krishna Prasad, OA Al-Ani, JP Goss and JD Mar

   Physical Review M

   in press

   2023
2. 

   Charge Transfer and Quantum Emitters in Two-Dimensional Heterostructures: An Ab Initio Study

   Madhava Krishna Prasad, OA Al-Ani, JP Goss and JD Mar

   AIP conference proceedings

   2743

   020004

   2023

   /SPAN>
3. 

   Vacancy Migration and Associated Charge-Transfer at the ZnS/CZTS Interface

   FH Bahrani, JP Goss, PR Briddon and MJ Rayson

   Proc. 33rd European Photovoltaic Solar Energy Conference and Exhibition

   1068–1073

   2017
4. 

   Doping of graphene: Density functional calculations of charge transfer between GaAs and graphene and carbon nanostructures.

   TAG Eberlein, R Jones, JP Goss and PR Briddon

   Physical Review B

   78

   045403

   5

   2008
5. 

   Theory of Mn-H co-doping for GaAs and related magnetic semiconductors

   JP Goss, PR Briddon and MG Wardle

   Physica B

   376–377

   654–657

   2006
6. 

   Theory of Mn_Ga-H and other acceptor-H complexes in GaAs

   JP Goss and PR Briddon

   Physical Review B

   72

   115211

   8

   2005
7. 

   Vibrational modes of sulfur defects in GaP

   RS Leigh, MJL Sangster, RC Newman, JP Goss, R Jones, VJB Torres, S Öberg and PR Briddon

   Physical Review B

   68

   033304

   4

   2003
8. 

   Energetics and vibrational frequencies of interstitial H₂ molecules in semiconductors

   CG van De Walle and JP Goss

   Materials Science and Engineering: B

   58

   17–23

   1999
9. 
   Is H passivating Mg Acceptors Bond-centred in InP:Mg and Anti-bonded in GaAs:Mg?
   R. Bouanani-Rahbi, B. Pajot, C.P. Ewels, S. Öberg, J Goss, R Jones, Y. Nissim, B. Theys, C. Blaauw,
   Shallow Level Centers in Semiconductors, ed. C.A.J. Ammerlaan and B. Pajot, World Scientific, Singapore, (1997)
    

10. 

    A First Principles Study Of Defects In Semiconductors

    JP Goss

    Thesis: Doctor of Philosophy in Physics in the Faculty of Science

    University of Exeter

    Jan 1997
11. 

    (C_As)₂-hydrogen defects in GaAs: A first-principles study

    JP Goss, R Jones, S Öberg and PR Briddon

    Physical Review B

    55

    15576–15580

    1997
12. 

    Hydrogen passivated defects in InP

    CP Ewels, S Öberg, PR Briddon, J Goss, R Jones, SJ Breuer, R Darwich and B Pajot

    Solid State Communications

    93

    459–460

    1995
13. 

    Theory of the NiH₂ complex in Si and the CuH₂ complex in GaAs

    R Jones, J Goss, S Öberg, PR Briddon and A Resende

    Materials Science Forum

    196–201

    921–925

    1995
14. 

    The hydrogen complexes in gallium-arsenide and indium-phosphide doped with magnesium

    R Rahbi, B Pajot, CP Ewels, S Öberg, J Goss, R Jones, Y Nissim, B Theys and C Blaauw

    Solid State Communications

    93

    462–462

    1995
15. 

    Ab Initio Calculations of Anharmonicity of the C-H Stretch Mode in HCN and GaAs

    R Jones, J Goss, C Ewels and S Öberg

    Physical Review B

    50

    8378–8388

    1994

Methodology

1. 

   Model thermodynamics and the role of free-carrier energy at high temperatures: Nitrogen and boron pairing in diamond.

   RM MacLeod, SW Murray, JP Goss, PR Briddon and RJ Eyre

   Physical Review B

   80

   054106

   7

   2009
2. 

   Marker-Method Calculations for Electrical Levels Using Gaussian-Orbital Basis Sets

   JP Goss, MJ Shaw and PR Briddon

   Topics in Applied Physics

   104

   69–94

   2007
3. 

   Donor and acceptor states in diamond

   JP Goss, PR Briddon, R Jones and S Sque

   Diamond and Related Materials

   13

   684–690

   2004
4. 

   First principles calculation of zero-field splitting tensors

   MJ Rayson, JP Goss and PR Briddon

   Physica B

   340

   673–676

   2003

Molecular Chemistry

1. 

   Self-assembly of a bis(adeninyl)-Cu(I) complex: a cationic nucleobase duplex mimic

   Miguel A Galindo, David Amantia, William Clegg, Ross W Harrington, Richard J Eyre, Jonathan P Goss, Patrick R Briddon, William McFarlane and Andrew Houlton

   Chemical Communications

   2009

   2833–2835

   2009
2. 

   Structure and vibrational properties of oxohalides of vanadium

   V Guiot, I Suarez-Martinez, P Wagner, J Goss, P Briddon, AW Allaf and CP Ewels

   Inorganic Chemistry

   48

   3660–3666

   2009
3. 

   The structures and properties of tetrafluoromethane, hexafluoroethane, and octafluoropropane using the AIMPRO density functional program

   RW Zoellner, CD Latham, JP Goss, WG Golden, R Jones and PR Briddon

   Journal of Fluorine Chemistry

   121

   193–199

   2003
4. 

   Ab Initio Calculations of Anharmonicity of the C-H Stretch Mode in HCN and GaAs

   R Jones, J Goss, C Ewels and S Öberg

   Physical Review B

   50

   8378–8388

   1994

Plasmas

1. 

   Global model of a radiofrequency H₂ plasma in DENISE

   R Zorat, J Goss, D Boilson and D Vender

   Plasma Sources Science and Technology

   9

   161–168

   2000
2. 

   Measurement of the electron energy distribution function in an argon radio-frequency discharge in the γ mode

   CM Deegan, JP Goss, D Vender and MB Hopkins

   Applied Physics Letters

   74

   1969–1971

   1999
3. 

   Investigation of the Spatial Structure of a Capacitive Radiofrequency Discharge

   CM Deegan, JP Goss, D Vender and MB Hopkins

   Euro. Phys. Abs.

   22

   202

   1998
4. 

   Comparison Between Fluid Simulations and Experimentally Measured Profiles for an Inductive Ar Discharge in a Cylindrical Geometry

   JP Goss, G Cunge, B Crowley, D Vender and MM Turner

   Euro. Phys. Abs.

   22

   220

   1998
5. 

   Zero-Dimensional Model of a Low Pressure H₂ Discharge

   R Zorat, JP Goss and D Vender

   Euro. Phys. Abs.

   22

   350

   1998

QDs

1. 

   Optical properties of mesoporous 4H-SiC prepared by anodic electrochemical etching

   M Rashid, BR Horrocks, N Healy, JP Goss and AB Horsfall

   Journal of Applied Physics

   120

   194303

   2016
2. 

   Surface-state dependent optical properties of OH-, F-, and H-terminated 4H-SiC quantum dots

   M Rashid, AK Tiwari, JP Goss, MJ Rayson, P Briddon and AB Horsfall

   Physical Chemistry Chemical Physics

   18

   21676–21685

   2016
3. 

   Tuning optoelectronic properties of 4H-SiC QDs using -H, -OH and -F surface functionalisation

   M Rashid, AK Tiwari, N Wood, P Briddon, JP Goss, MJ Rayson, NG Wright and AB Horsfall

   Materials Science Forum

   821–823

   375–378

   2015
4. 

   Theoretical investiagation on optical characteristics of functionalised silicon quantum dots

   ME Ahmed, JP Goss, RJ Eyre, PR Briddon and MA Taylforth

   NSTI Technical Proceedings: Nanotech2010

   2

   556–559

   2010
5. 

   Ab Initio Study of functionalized 1 nm Silicon Nanoparticles

   ME Ahmed, JP Goss, RJ Eyre, PR Briddon and MA Taylforth

   Journal of Physics Conference Serieses

   245

   012046

   4

   2010
6. 

   The effect of progressive oxidation on the optical properties of small Silicon Quantum Dots: A computational study

   RJ Eyre, JP Goss and PR Briddon

   Physical Review B

   77

   245407

   7

   2008
7. 

   Stability of singly hydrated silanone on silicon quantum dot surfaces: density functional simulations

   RJ Eyre, JP Goss, RM MacLeod and PR Briddon

   Physical Chemistry Chemical Physics

   10

   4495–4502

   2008
8. 

   A density functional study of oxygen migration processes for silicon quantum dots.

   RJ Eyre, JP Goss and PR Briddon

   Physical Review B

   76

   245325

   6

   2007

SiC

1. 

   Structure and electron affinity of the 4H–SiC (0001) surfaces: a methodological approach for polar systems

   JMA Beattie, JP Goss, MJ Rayson and PR Briddon

   Joural of Physics: Condensed Matter

   33

   165003

   2021
2. 

   Stucture and electron affinity of (1120)-X 4H-SiC surface

   JMA Beattie, JP Goss, MJ Rayson and PR Briddon

   Applied Surface Science

   518

   145986

   2020
3. 

   First Principles Study of the Stability and Diffusion Mechanism of a Carbon Vacancy in the Vicinity of a SiO₂/4H-SiC Interface

   H Alsnani, JP Goss, PR Briddon, MJ Rayson and AB Horsfall

   Physica Status Solidi A

   216

   1900348

   2019
4. 

   Theory of Carbon-Vacancy Diffusion at the SiO₂/4H-SiC Interface

   H Alsnani, JP Goss, PR Briddon, MJ Rayson and AB Horsfall

   Materials Science Forum

   963

   204–207

   2019
5. 

   Investigation of Carbon Interstitials in the Vicinity of the Si0₂/4H-SiC(0001) Interface

   H Alsnani, JP Goss, O Al-Ani, SH Olsen, PR Briddon, MJ Rayson and AB Horsfall

   Proceedings of the 2018 International Semiconductor Conference (CAS), Sinaia, Romania

   2018
6. 

   Pore wall thinning of mesoporous 4H-SiC by sacrificial oxidation

   M Rashid, MI Idris, BR Horrocks, N Healy, JP Goss and AB Horsfall

   Crystal Research Technology

   53

   1800120

   2018
7. 

   Surface Functionalization of Silicon Carbide Quantum Dots

   M Rashid, BR Horrocks, N Healy, JP Goss, HK Chan and AB Horsfall

   Low Power Semiconductor Devices and Processes for Emerging Applications in Communications, Computing, and Sensing

   S Walia

   Taylor & Francis

   8

   181–200

   2018
8. 

   Optical properties of mesoporous 4H-SiC prepared by anodic electrochemical etching

   M Rashid, BR Horrocks, N Healy, JP Goss and AB Horsfall

   Journal of Applied Physics

   120

   194303

   2016
9. 

   Surface-state dependent optical properties of OH-, F-, and H-terminated 4H-SiC quantum dots

   M Rashid, AK Tiwari, JP Goss, MJ Rayson, P Briddon and AB Horsfall

   Physical Chemistry Chemical Physics

   18

   21676–21685

   2016
10. 

    Tuning optoelectronic properties of 4H-SiC QDs using -H, -OH and -F surface functionalisation

    M Rashid, AK Tiwari, N Wood, P Briddon, JP Goss, MJ Rayson, NG Wright and AB Horsfall

    Materials Science Forum

    821–823

    375–378

    2015
11. 

    Facile technique for the removal of metal contamination from graphene

    GH Wells, MRC Hunt, T Hopf, V Vassilevski, E Escobedo-Cousin, AB Horsfall, JP Goss,and A O'Neill

    Journal of Vacuum Science and Technology B

    33

    051802

    2015
12. 

    Solid phase growth of graphene on silicon carbide by nickel silicidation: graphene formation mechanisms

    E Escobedo-Cousin, K Vassilevski, T Hopf, N Wright, A O'Neill, A Horsfall and J Goss

    Materials Science Forum

    778–780

    1162–1165

    2014
13. 

    The Low Frequency Noise Spectrum in Gated Epitaxial Graphene Field Effect Transistors

    DK Gaskill, HK Chan, VD Wheeler, VK Nagareddy, LO Nyakiti, A Nath, RL Myers-Ward, ZR Robinson, NY Garces, MV Rao, JP Goss, NG Wright, CR Eddy Jr, AB Horsfall

    Bulletin of the APS

    2014
14. 

    Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature

    T Hopf, K Vassilevski, E Escobedo-Cousin, PJ King, NG Wright, A O'Neill, AB Horsfall, JP Goss, GH Wells and MRC Hunt

    Journal of Applied Physics

    116

    154504

    2014
15. 

    Optimizing the vacuum growth of epitaxial graphene on 6H-SiC

    T Hopf, K Vassilevski, E Escobedo-Cousin, N Wright, A O'Neill, A Horsfall, J Goss, A Barlow, G Wells and M Hunt

    Materials Science Forum

    778–780

    1154–1157

    2014
16. 

    Low Frequency Noise Analysis of Monolithically Fabricated 4H-SiC CMOS Field Effect Transistors

    LC Martin, HK Chan, D Clark, EP Ramsay, AE Murphy, DA Smith, RF Thompson, RAR Young, JP Goss, NG Wright and AB Horsfall

    Materials Science Forum

    778–780

    428–431

    2014
17. 

    Determination of the adhesion energy of graphene on SiC(0001) via measurement of pleat defects

    GH Wells, T Hopf,. V Vassilevski, E Escobedo-Cousin, NG Wright, AB Horsfall, JP Goss, AG O’Neill and MRC Hunt

    Applied Physics Letters

    105

    193109

    4

    2014
18. 

    Reliability evaluation of 4H-SiC JFETs using I–V characteristics and Low Frequency noise

    HK Chan, RC Stevens, JP Goss, NG Wright and AB Horsfall

    Materials Science Forum

    740–742

    934–937

    2013
19. 

    Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon

    E Escobedo-Cousin, K Vassilevski, T Hopf, N Wright, A O'Neill, A Horsfall, J Goss and P Cumpson

    Journal of Applied Physics

    113

    114309

    11

    2013
20. 

    Optimising the Growth of Few-Layer Graphene on Silicon Carbide by Nickel Silicidation

    E Escobedo-Cousin, K Vassilevski, T Hopf, N Wright, A O'Neill, A Horsfall, J Goss and P Cumpson

    Materials Science Forum

    740–742

    121–124

    2013
21. 

    Detection of polar chemical vapors using epitaxial graphene grown on SiC (0001)

    VK Nagareddy, HK Chan, SC Hernandez, VD Wheeler, RL Myers-Ward, LO Nyakiti, CR Eddy Jr, SG Walton, JP Goss, NG Wright, DK Gaskill and AB Horsfall

    Applied Physics Letters

    102

    173103

    5

    2013
22. 

    Improved Chemical Detection and Ultra-Fast Recovery Using Oxygen Functionalized Epitaxial Graphene Sensors

    VK Nagareddy, HK Chan, SC Hernandez, VD Wheeler, LO Nyakiti, RL Myers-Ward, CR Eddy Jr, JP Goss, NG Wright, SG Walton, DK Gaskill and AB Horsfall

    IEEE Sensors Journal

    13

    2810–2817

    2013
23. 

    Low Frequency Noise in 4H-SiC Lateral JFET Structures

    HK Chan, RC Stevens, JP Goss, NG Wright and AB Horsfall

    Materials Science Forum

    717–720

    473–476

    2012
24. 

    Local Solid Phase Epitaxy of Few-Layer Graphene on Silicon Carbide

    E Escobedo-Cousin, K Vassilevski, I Nikitina, N Wright, A O'Neill, A Horsfall and J Goss

    Materials Science Forum

    717–720

    629–632

    2012
25. 

    Identification of Slow States at the SiO₂/SiC Interface through Sub-Bandgap Illumination

    Christopher M Spargo, Benjamin JD Furnival, RM Mahapatra, JP Goss, Nicolas G Wright and Alton B Horsfall

    Materials Science Forum

    717–720

    801–804

    2012
26. 

    Density functional simulations of physisorbed and chemisorbed single graphene layers on 4H-SiC (0001), (0001̅) and 4H-SiC:H surface

    JP Goss, PR Briddon, NG Wright and AB Horsfall

    Materials Science Forum

    645–648

    619–622

    2010

SiGe

1. 

   Density-functional theory study of interstitial iron and its complexes with B and Al in dilute SiGe alloys

   A Carvalho, J Coutinho, R Jones, M Barroso, JP Goss and PR Briddon

   Materials Science in Semiconductor Processing

   11

   332–335

   2008
2. 

   First-principles study of Fe and FeAl defects in SiGe alloys

   A Carvalho, J Coutinho, R Jones, J Goss, M Barroso and PR Briddon

   Physical Review B

   78

   125208

   10

   2008

Silicon

1. 

   Impact of grain boundary structures on trapping iron

   OA Al-Ani, JP Goss, M Al-Hadidi, PR Briddon, MJ Rayson and NEB Cowern

   Journal of Crystal Growth

   468

   448–451

   2017
2. 

   Interstitial Fe-pairs in silicon

   OA Al-Ani, JP Goss, PR Briddon, MJ Rayson and NEB Cowern

   Journal of Crystal Growth

   468

   54–56

   2017
3. 

   Voids in silicon as a sink for interstitial iron: a density functional study

   OA Al-Ani, JP Goss, M Al-Hadidi, PR Briddon, MJ Rayson and NEB Cowern

   Journal of Crystal Growth

   468

   101–103

   2017
4. 

   A density functional study of iron segregation at ISFs and Σ5-(001) GBs in mc-Si

   OA Al-Ani, JP Goss, NEB Cowern, PR Briddon, M Al-Hadidi, R Al-Hamadany and MJ Rayson

   Solid State Phenomena

   242

   224–229

   2016
5. 

   Investigation into efficiency-limiting defects in mc-Si solar cells

   OA Al-Ani, AMA Sabaawi, JP Goss, NEB Cowern, PR Briddon and MJ Rayson

   Solid State Phenomena

   242

   96–101

   2016
6. 

   Extended Point Defects in Crystalline Materials: Ge and Si

   NEB Cowern, S Simdyankin, C Ahn, NS Bennett, JP Goss, J-M Hartmann, A Pakfar, S Hamm, J Valentin, E Napolitani, D De Salvador, E Bruno and S Mirabella

   Physical Review Letters

   110

   155501

   5

   2013
7. 

   The self-interstitial in silicon and germanium

   R Jones, A Carvalho, JP Goss and PR Briddon

   Materials Science and Engineering B

   159–160

   112–116

   2009
8. 

   Radiation-hard semiconductor detectors for SuperLHC

   M Bruzzi, …, J Goss, …

   Nuclear Instruments and Methods in Physics Research Section A

   541

   189–201

   2005
9. 

   Recent advancements in the development of radiation hard semiconductor detectors for S-LHC

   E Fretwurst, …, J Goss, …

   Nuclear Instruments and Methods in Physics Research Section A

   552

   7–19

   2005
10. 

    Diffusion of nitrogen in silicon

    N Fujita, R Jones, JP Goss, PR Briddon, T Frauenheim and S Öberg

    Applied Physics Letters

    87

    021902

    3

    2005
11. 

    Theoretical investigations of the diffusion of nitrogen-pair defects in silicon

    N Fujita, R Jones, JP Goss, T Frauenheim, S Öberg and PR Briddon

    Solid State Phenomena

    108–109

    407–412

    2005
12. 

    Development of radiation tolerant semiconductor detectors for the Super-LHC

    M Moll, …, J Goss, …

    Nuclear Instruments and Methods in Physics Research Section A

    546

    99–107

    2005
13. 

    DFT analysis of the Indium-Antimony-Vacancy cluster in Silicon

    MM De Souza and J Goss

    Defect and Diffusion Forum

    245–246

    29–38

    2005
14. 

    Structural and electronic properties of thin fluorite-structure NiSi₂, COSi₂ and FeSi₂ interfaces and precipitates in Si

    MG Wardle, JP Goss, PR Briddon and R Jones

    Physica Status Solidi A

    202

    883–888

    2005
15. 

    Electrical and optical properties of rod-like defects in silicon

    JP Goss, PR Briddon, TAG Eberlein, R Jones, N Pinho, AT Blumenau and S Öberg

    Applied Physics Letters

    85

    4633–4635

    2004
16. 

    Calculated properties of a {113} planar vacancy aggregate in Si

    JP Goss, PR Briddon and R Jones

    Journal of Physics: Condensed Matter

    16

    3311–3318

    2004
17. 

    Structure and electronic properties of nitrogen defects in silicon

    R Jones, I Hahn, JP Goss, PR Briddon and S Öberg

    Solid State Phenomena

    95–96

    93–98

    2004
18. 

    Identification of boron clusters and boron-interstitial clusters in silicon

    J Adey, JP Goss, R Jones and PR Briddon

    Physical Review B

    67

    245325

    5

    2003
19. 

    Interstitial boron defects in Si

    J Adey, JP Goss, R Jones and PR Briddon

    Physica B

    340

    505–508

    2003
20. 

    Optical and electrical activity of boron interstitial defects in Si

    J Adey, R Jones, PR Briddon and JP Goss

    Journal of Physics: Condensed Matter

    15

    S2851–S2858

    2003
21. 

    First-principles calculations of pseudolocal vibrational modes: The case of Cu and Cu pairs in Si

    SK Estreicher, D West, J Goss, S Knack and J Weber

    Physical Review Letters

    90

    035504

    4

    2003
22. 

    Vibrational modes and electronic properties of nitrogen defects in silicon

    JP Goss, I Hahn, R Jones, PR Briddon and S Öberg

    Physical Review B

    67

    045206

    11

    2003
23. 

    First principles calculation of zero-field splitting tensors

    MJ Rayson, JP Goss and PR Briddon

    Physica B

    340

    673–676

    2003
24. 

    Planar interstitial aggregates in Si

    JP Goss, TAG Eberlein, R Jones, N Pinho, AT Blumenau, T Frauenheim, PR Briddon and S Öberg

    Journal of Physics: Condensed Matter

    14

    12843–12853

    2002
25. 

    Self-interstitial clusters in silicon

    R Jones, TAG Eberlein, N Pinho, BJ Coomer, JP Goss, PR Briddon and S Öberg

    Nuclear Instruments and Methods in Physics Research Section B

    186

    10–18

    2002
26. 

    Identification of the tetra-interstitial in silicon

    BJ Coomer, JP Goss, R Jones, S Öberg and PR Briddon

    Journal of Physics: Condensed Matter

    13

    L1–L7

    2001
27. 

    Self-interstitial clusters in silicon

    TAG Eberlein, N Pinho, R Jones, BJ Coomer, JP Goss, PR Briddon and S Öberg

    Physica B

    308

    454–457

    2001
28. 

    Modelling electron energy-loss spectra of dislocations in silicon and diamond

    CJ Fall, JPG Goss, R Jones, PR Briddon, AT Blumenau and T Frauenheim

    Physica B

    308

    577–580

    2001
29. 

    Intrinsic defects and the D1 to D4 optical bands detected in plastically deformed Si

    R Jones, BJ Coomer, JP Goss, S Öberg and PR Briddon

    Physica Status Solidi B

    222

    133–140

    2000
30. 

    The interaction of hydrogen with deep level defects in silicon

    R Jones, BJ Coomer, JP Goss, B Hourahine and A Resende

    Solid State Phenomena

    71

    173–248

    2000
31. 

    Interstitial aggregates and a new model for the I₁/W optical centre in silicon

    BJ Coomer, JP Goss, R Jones, S Öberg and PR Briddon

    Physica B

    274

    505–508

    1999
32. 

    The divacancy in silicon and diamond

    BJ Coomer, A Resende, JP Goss, R Jones, S Öberg and PR Briddon

    Physica B

    274

    520–523

    1999
33. 

    Energetics and vibrational frequencies of interstitial H₂ molecules in semiconductors

    CG van De Walle and JP Goss

    Materials Science and Engineering: B

    58

    17–23

    1999
34. 

    Identification of the hydrogen-saturated self-interstitials in silicon and germanium

    M Budde, B Bech Nielsen, P Leary, J Goss, R Jones, PR Briddon, S Öberg and SJ Breuer

    Physical Review B

    57

    4397–4412

    1998
35. 

    The hydrogen-saturated self-interstitial in silicon and germanium

    M Budde, B Bech Nielsen, P Leary, J Goss, R Jones, PR Briddon, S Öberg and SJ Breuer

    Materials Science Forum

    258–263

    35–40

    1997
36. 

    A First Principles Study Of Defects In Semiconductors

    JP Goss

    Thesis: Doctor of Philosophy in Physics in the Faculty of Science

    University of Exeter

    Jan 1997
37. 

    Theory of gold-hydrogen complexes in silicon

    A Resende, J Goss, PR Briddon, S Öberg and R Jones

    Materials Science Forum

    258–263

    295–300

    1997
38. 

    The nitrogen-pair oxygen defect in silicon

    F Berg Rasmussen, S Öberg, R Jones, C Ewels, J Goss, J Miro and P Deák

    Early Stages of Oxygen Precipitation in Silicon

    R Jones

    17

    NATO ASI - 3 High Technology

    Kluwers Academic Press, Dordrecht

    1996
39. 

    The nitrogen-pair oxygen defect in silicon

    F Berg Rasmussen, S Öberg, R Jones, C Ewels, J Goss, J Miro and P Deák

    Materials Science and Engineering: B

    36

    91–95

    1996
40. 

    H interacting with intrinsic defects in Si

    B Bech Nielsen, L Hoffmann, M Budde, R Jones, J Goss and S Öberg

    Materials Science Forum

    196–201

    933–937

    1995
41. 

    The NNO defect in silicon

    F Berg Rasmussen, S Öberg, R Jones, C Ewels, J Goss, J Miro and P Deák

    Materials Science Forum

    196–201

    791–795

    1995
42. 

    Theory of the NiH₂ complex in Si and the CuH₂ complex in GaAs

    R Jones, J Goss, S Öberg, PR Briddon and A Resende

    Materials Science Forum

    196–201

    921–925

    1995
43. 

    Theory of Nickel and Nickel-Hydrogen Complexes in Silicon

    R Jones, S Öberg, J Goss, PR Briddon and A Resende

    Physical Review Letters

    75

    2734–2737

    1995
44. 

    Theoretical and Isotopic Infrared-Absorption Investigations of Nitrogen-Oxygen Defects in Silicon

    R Jones, C Ewels, J Goss, J Miro, P Deák, S Öberg and F Berg Rasmussen

    Semiconductor Science and Technology

    9

    2145–2148

    1994

Text Reviews

1. 

   Text Book Review: "Introductory Semiconductor Device Physics" By Greg Parker University of Southampton, UK

   J Goss

   Physical Sciences Educational Reviews

   7(1)

   40–41

   2006
2. 

   Text Book Review: "Band Theory and Electronic Properties of Solids" By John Singleton, Department of Physics, University of Oxford

   J Goss

   Physical Sciences Educational Reviews

   6(1)

   11–12

   2005
3. 

   Text Book Review: "Quantum Mechanics: Concepts and Applications" By Nouredine Zettili

   J Goss

   Physical Sciences Educational Reviews

   3(1)

   17

   2002
4. 

   Text Book Review: "Fundamentals of Classical and Statistical Thermodynamics" By Bimalendu Narayan Roy

   J Goss

   Physical Sciences Educational Reviews

   3(2)

   10–11

   2002
5. 

   Text Book Review: "Physics" By JD Cutnell and KW Johnson

   J Goss

   Physical Sciences Educational Reviews

   2(1)

   27–28

   2001

ZnO

1. 

   First Principles Study of the Diffusion of Hydrogen in ZnO

   MG Wardle, JP Goss and PR Briddon

   Physical Review Letters

   96

   4

   2006
2. 

   Relationship between binding-site and pressure-dependence for defect-hydrogen complexes in ZnO

   MG Wardle, JP Goss and PR Briddon

   Applied Physics Letters

   88

   261906

   3

   2006
3. 

   Transition-metal and hydrogen in ZnO: a source of shallow donors

   MG Wardle, JP Goss and PR Briddon

   Physica B

   376–377

   731–734

   2006
4. 

   Theory of Fe, Co, Ni, Cu, and their complexes with hydrogen in ZnO

   MG Wardle, JP Goss and PR Briddon

   Physical Review B

   72

   155108

   2005
5. 

   Theory of Li in ZnO: A limitation for Li-based p-type doping

   MG Wardle, JP Goss and PR Briddon

   Physical Review B

   71

   155205

   10

   2005