Publications by TopicPublications by Year

Page 1

ATiO3

Diamond

  1. First principles theory of impurity-vacancy complexes in diamond
    JP Goss, R Jones, SJ Breuer, PR Briddon, and S Öberg
    Proceedings of the 23rd International Conference on the Physics of Semiconductors
    M Scheffler and R Zimmermann
    2577–2580
    World Scientific, London
    1996

Germanium

Graphene

Page 2

III-Vs

  1. Is H passivating Mg Acceptors Bond-centred in InP:Mg and Anti-bonded in GaAs:Mg?
    R. Bouanani-Rahbi, B. Pajot, C.P. Ewels, S. Öberg, J Goss, R Jones, Y. Nissim, B. Theys, C. Blaauw,
    Shallow Level Centers in Semiconductors, ed. C.A.J. Ammerlaan and B. Pajot, World Scientific, Singapore, (1997)
     

Plasmas

  1. Investigation of the Spatial Structure of a Capacitive Radiofrequency Discharge
    CM Deegan, JP Goss, D Vender and MB Hopkins
    Euro. Phys. Abs.
    22
    202
    1998
  2. Comparison Between Fluid Simulations and Experimentally Measured Profiles for an Inductive Ar Discharge in a Cylindrical Geometry
    JP Goss, G Cunge, B Crowley, D Vender and MM Turner
    Euro. Phys. Abs.
    22
    220
    1998
  3. Zero-Dimensional Model of a Low Pressure H2 Discharge
    R Zorat, JP Goss and D Vender
    Euro. Phys. Abs.
    22
    350
    1998

Page 3

QDs

SiC

Silicon

Page 4